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题名

Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip

作者
通讯作者Li,Kwai Hei
发表日期
2020-11-04
DOI
发表期刊
ISSN
1944-8244
EISSN
1944-8252
卷号12期号:44页码:49748-49754
摘要

Optical refractometer constitutes the core element for many applications, from determining the purity and concentration of pharmaceutical ingredients to measuring the sugar content in food and beverages, and the analysis of petroleum. Here, we demonstrated the monolithic integration of light-emitting diodes (LEDs) and photodetectors (PDs) to fabricate ultracompact refractometers with a chip size of 475 × 320 μm2. The light emission and photodetection properties of the devices containing the same InGaN/GaN multi-quantum wells have been characterized, confirming that the PD can respond to the emission of the LED. The flip-chip assembly of the chip enables the exposed sapphire substrate to be in direct contact with the solution, and the refractive index sensing capability governed by the change of critical angle and Fresnel reflection at the sapphire/solution interface has been investigated. The processing of the optically smooth surface of sapphire and the integration of high-reflectance distributed Bragg reflector beneath the devices facilitate the amount of light received by the PD. The monolithic chip is capable of detecting solutions with a refractive index ranging from 1.3325 to 1.5148 RIU and exhibits a sensitivity of 7.77 μA/RIU and a resolution of 6.4 × 10-6 RIU at the LED current of 10 mA. Rapid real-time responses of 33.9 ms for rise time and 34.7 ms for fall time are obtained in the detected photocurrent, thereby verifying the feasibility of the chip-scale refractometer.

关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
Basic and Applied Basic Research of Guangdong Province[2019A1515110772] ; SUSTech Startup Fund[Y01796103]
WOS研究方向
Science & Technology - Other Topics ; Materials Science
WOS类目
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000589384100042
出版者
EI入藏号
20204709516522
EI主题词
Integration ; Light emitting diodes ; Refractive index ; Refractometers ; Photodetectors ; Sapphire ; III-V semiconductors ; Reflection ; Monolithic integrated circuits
EI分类号
Gems:482.2.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Calculus:921.2 ; Optical Instruments:941.3
Scopus记录号
2-s2.0-85095672508
来源库
Scopus
引用统计
被引频次[WOS]:18
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/209110
专题工学院_深港微电子学院
工学院_电子与电气工程系
作者单位
1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
2.Department of Electrical and Electronic Engineering (Joint Appointment with School of Biomedical Sciences),University of Hong Kong,Hong Kong,Pokfulam Road,China
3.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Southern University of Science and Technology,Shenzhen,518055,China
第一作者单位深港微电子学院
通讯作者单位深港微电子学院;  南方科技大学
第一作者的第一单位深港微电子学院
推荐引用方式
GB/T 7714
Chen,Liang,An,Xiaoshuai,Jing,Jixiang,et al. Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip[J]. ACS Applied Materials & Interfaces,2020,12(44):49748-49754.
APA
Chen,Liang,An,Xiaoshuai,Jing,Jixiang,Jin,Haotian,Chu,Zhiqin,&Li,Kwai Hei.(2020).Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip.ACS Applied Materials & Interfaces,12(44),49748-49754.
MLA
Chen,Liang,et al."Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip".ACS Applied Materials & Interfaces 12.44(2020):49748-49754.
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