题名 | Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip |
作者 | |
通讯作者 | Li,Kwai Hei |
发表日期 | 2020-11-04
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DOI | |
发表期刊 | |
ISSN | 1944-8244
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EISSN | 1944-8252
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卷号 | 12期号:44页码:49748-49754 |
摘要 | Optical refractometer constitutes the core element for many applications, from determining the purity and concentration of pharmaceutical ingredients to measuring the sugar content in food and beverages, and the analysis of petroleum. Here, we demonstrated the monolithic integration of light-emitting diodes (LEDs) and photodetectors (PDs) to fabricate ultracompact refractometers with a chip size of 475 × 320 μm2. The light emission and photodetection properties of the devices containing the same InGaN/GaN multi-quantum wells have been characterized, confirming that the PD can respond to the emission of the LED. The flip-chip assembly of the chip enables the exposed sapphire substrate to be in direct contact with the solution, and the refractive index sensing capability governed by the change of critical angle and Fresnel reflection at the sapphire/solution interface has been investigated. The processing of the optically smooth surface of sapphire and the integration of high-reflectance distributed Bragg reflector beneath the devices facilitate the amount of light received by the PD. The monolithic chip is capable of detecting solutions with a refractive index ranging from 1.3325 to 1.5148 RIU and exhibits a sensitivity of 7.77 μA/RIU and a resolution of 6.4 × 10-6 RIU at the LED current of 10 mA. Rapid real-time responses of 33.9 ms for rise time and 34.7 ms for fall time are obtained in the detected photocurrent, thereby verifying the feasibility of the chip-scale refractometer. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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学校署名 | 第一
; 通讯
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资助项目 | Basic and Applied Basic Research of Guangdong Province[2019A1515110772]
; SUSTech Startup Fund[Y01796103]
|
WOS研究方向 | Science & Technology - Other Topics
; Materials Science
|
WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000589384100042
|
出版者 | |
EI入藏号 | 20204709516522
|
EI主题词 | Integration
; Light emitting diodes
; Refractive index
; Refractometers
; Photodetectors
; Sapphire
; III-V semiconductors
; Reflection
; Monolithic integrated circuits
|
EI分类号 | Gems:482.2.1
; Semiconducting Materials:712.1
; Semiconductor Devices and Integrated Circuits:714.2
; Light/Optics:741.1
; Calculus:921.2
; Optical Instruments:941.3
|
Scopus记录号 | 2-s2.0-85095672508
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:18
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/209110 |
专题 | 工学院_深港微电子学院 工学院_电子与电气工程系 |
作者单位 | 1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China 2.Department of Electrical and Electronic Engineering (Joint Appointment with School of Biomedical Sciences),University of Hong Kong,Hong Kong,Pokfulam Road,China 3.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Southern University of Science and Technology,Shenzhen,518055,China |
第一作者单位 | 深港微电子学院 |
通讯作者单位 | 深港微电子学院; 南方科技大学 |
第一作者的第一单位 | 深港微电子学院 |
推荐引用方式 GB/T 7714 |
Chen,Liang,An,Xiaoshuai,Jing,Jixiang,et al. Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip[J]. ACS Applied Materials & Interfaces,2020,12(44):49748-49754.
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APA |
Chen,Liang,An,Xiaoshuai,Jing,Jixiang,Jin,Haotian,Chu,Zhiqin,&Li,Kwai Hei.(2020).Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip.ACS Applied Materials & Interfaces,12(44),49748-49754.
|
MLA |
Chen,Liang,et al."Ultracompact Chip-Scale Refractometer Based on an InGaN-Based Monolithic Photonic Chip".ACS Applied Materials & Interfaces 12.44(2020):49748-49754.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Ultracompact Chip-Sc(4317KB) | -- | -- | 限制开放 | -- |
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