Investigation of electrical contacts to p‐grid in sic power devices based on charge storage effect and dynamic degradation

Zhang，Meng1,2; Li，Baikui1; Hua，Mengyuan3; Wei，Jin4

2020-10-01

10.3390/electronics9101723

Electronics   影响因子和分区

2079-9292

2079-9292

P‐grid is a typical feature in power devices to block high off‐state voltage. In power devices, the p‐grid is routinely coupled to an external electrode with an Ohmic contact, but Schottky contact to the p‐grid is also proposed/adopted for certain purposes. This work investigates the role of contact to p‐grid in power devices based on the commonly adopted technology computer‐aided design (TCAD) device simulations, with the silicon carbide (SiC) junction barrier Schottky (JBS) diode as a case study. The static characteristics of the JBS diode is independent of the nature of the contact to p‐grid, including the forward voltage drop (VF) and the breakdown voltage (BV). However, during the switching process, a Schottky contact would cause storage of negative charges in the p‐grid, which leads to an increased VF during switching operation. On the contrary, an Ohmic contact provides an effective discharging path for the stored negative charges in the p‐grid, which eliminates the dynamic degradation issues. Therefore, the necessity of an Ohmic contact to p‐grid in power devices is clarified.

Dynamic performance Electrical contacts SiC JBS diode Stored charges

SCI

英语

其他

National Natural Science Foundation of China[51907127][61604098] ; High-level University Fund[G02236002][G02236005] ; Shenzhen Science and Technology Innovation Commission[JCYJ20170412110137562] ; Shenzhen University Scientific Research Start-up Foundation[860-000002110207]

Engineering

Engineering, Electrical & Electronic

WOS:000586863500001

MDPI

2-s2.0-85093657688

Scopus

1.Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen,518060,China
2.Department of Industrial and Systems Engineering,The Hong Kong Polytechnic University,Hong Kong
3.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Institute of Microelectronics,Peking University,Beijing,100871,China

Zhang，Meng,Li，Baikui,Hua，Mengyuan,等. Investigation of electrical contacts to p‐grid in sic power devices based on charge storage effect and dynamic degradation[J]. Electronics,2020,9(10):1-9.

Zhang，Meng,Li，Baikui,Hua，Mengyuan,&Wei，Jin.(2020).Investigation of electrical contacts to p‐grid in sic power devices based on charge storage effect and dynamic degradation.Electronics,9(10),1-9.

Zhang，Meng,et al."Investigation of electrical contacts to p‐grid in sic power devices based on charge storage effect and dynamic degradation".Electronics 9.10(2020):1-9.