Investigation of bowing effect of 4’’ epitaxial wafer and reliability of gan-based micro-led devices

Zhang，Ke1,2; Liu，Yibo1; Cha，Ka Wah1; Yeung，Sze Yan1; Sun，Xiaowei2; Liu，Zhaojun1,2; Kwok，Hoi Sing1

10.1002/sdtp.14244

2020

0097-966X

2168-0159

Digest of Technical Papers - SID International Symposium

51

1

1764-1767

GaN-based Micro-LEDs have shown great potential in various filed, such as solid-state lighting, display, sensor, visible light communication and multifunctional devices. The performance of Micro-LEDs in various operating environment drew enormous attention recently. We investigate the fabrication process of Micro-LED devices with 4’’ epitaxial wafer. The problems occurred during the process, especially bowing effect, were systematically introduced. Several solutions have been proposed and compared. In addition, the characterization and reliability test were measured to show sufficient quality of those devices.

4” wafer Bowing effect Micro-LED Reliability

其他

英语

EI

20204409427251

III-V semiconductors ; Display devices ; Reliability ; Gallium nitride

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2

2-s2.0-85094197929

Scopus

1.State Key Laboratory of Advanced Displays and Optoelectronics Technologies,The Hong Kong University of Science and Technology,Hong Kong
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,China

Zhang，Ke,Liu，Yibo,Cha，Ka Wah,等. Investigation of bowing effect of 4’’ epitaxial wafer and reliability of gan-based micro-led devices[C],2020:1764-1767.