The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro light emitting diodes (micro-LEDs)

Liu，Yibo1; Zhang，Ke1; Chan，Joe1; Yeung，Sze Yan1; Liu，Zhaojun2; Kwok，Hoi Sing1

10.1002/sdtp.14235

2020

0097-966X

2168-0159

Digest of Technical Papers - SID International Symposium

51

1

1735-1738

In this paper, we reported a GaN/InGaN multiple quantum wells (MQWs) micro light emitting diode (Micro-LED) device with green light emission. For electronic performance, the Micro-LED device exhibited a forward voltage of only 2.61 V at the current density of 10 A/cm. For illumination performance, the emission light had 519 nm peak wavelength with a full width at half maximum (FWHM) of 22 nm. Furthermore, the diode ideality factor (n) was calculated and analyzed with different temperature categories (303 K to 573 K) and pixel sizes (30 fim to 200 µm), revealing a lower value of n with temperature growing and device scaling down.

Diode ideality factor Gan/ingan multiple quantum wells Micro light emitting diodes

通讯

英语

EI

20204409427448

III-V semiconductors ; Light emitting diodes ; Gallium nitride

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2

2-s2.0-85094182589

Scopus

1.Hong Kong University of Science and Technology,Hong Kong
2.Southern University of Science and Technology,Shenzhen,China

Liu，Yibo,Zhang，Ke,Chan，Joe,et al. The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro light emitting diodes (micro-LEDs)[C],2020:1735-1738.