Growth of GaN on monolayer hexagonal boron nitride by chemical vapor deposition for ultraviolet photodetectors

Zhu，Wenhui1; Si，Jiawei1; Zhang，Lei1; Li，Tao1; Song，Wenqing1; Zhou，Yuting2; Yu，Jiahao3; Chen，Rui3; Feng，Yexin2; Wang，Liancheng1

2020-10-01

10.1088/1361-6641/abb71d

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   影响因子和分区

0268-1242

1361-6641

Chemical vapor deposition (CVD) technology is a simple and flexible method used to prepare high-quality crystalline materials. Traditional CVD technology, based on pre-deposited thin catalyst metal, usually produces nanostructures instead of continuous films. In this work, a continuous GaN film on a monolayer boron nitride (h-BN) insertion layer is demonstrated using CVD technology. The experimental results and theoretical calculations indicate that abundant GaN nanocrystallites are firstly formed at the edges or grain boundaries of the monolayer h-BN by quasi-van der Waals epitaxy. Then, the vapor-solid mechanism will control further growth of the GaN nanocrystallites, causing them to merge into a continuous GaN film. Meanwhile, the CVD-grown GaN ultraviolet detector exhibits a relatively high responsivity with a value of 0.57 A W at 2 V. In this paper, a simple low-cost CVD method is proposed for preparing continuous films on two-dimensional materials for electronic and optoelectronic devices. Supplementary material for this article is available online.

Chemical vapor deposition Gallium nitride Hexagonal boron nitride Nanocrystalline Ultraviolet photodetector

SCI ; EI

英语

其他

National Key Research and Development Program of China[2018YFB0406702] ; Natural science foundation of Hunan province, China[2019JJ50751] ; Project of the State Key Laboratory of High-Performance Complex Manufacturing, Central South University, China[ZZYJKT2019-13][ZZYJKT2018-01][218091][217056]

Engineering ; Materials Science ; Physics

Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter

WOS:000585695000001

IOP PUBLISHING LTD

20204609495819

Gallium nitride ; Monolayers ; Nanocrystallites ; Photodetectors ; Photons ; Grain boundaries ; Boron nitride ; Diamond films ; Van der Waals forces ; Nanocrystals ; III-V semiconductors ; Nanocrystalline materials

Semiconducting Materials:712.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933 ; Crystalline Solids:933.1

PHYSICS

2-s2.0-85095972116

Scopus

1.State Key Laboratory of High Performance Complex Manufacturing,College of Mechanical and Electrical Engineering,Central South University,Changsha, Hunan,410083,China
2.Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices,School of Physics and Electronics,Hunan University,Changsha, Hunan,410082,China
3.Department of Electrical & Electronic Engineering,Southern University of Science and Technology,Shenzhen, Guangdong,518055,China

Zhu，Wenhui,Si，Jiawei,Zhang，Lei,et al. Growth of GaN on monolayer hexagonal boron nitride by chemical vapor deposition for ultraviolet photodetectors[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2020,35(12).

Zhu，Wenhui.,Si，Jiawei.,Zhang，Lei.,Li，Tao.,Song，Wenqing.,...&Wang，Liancheng.(2020).Growth of GaN on monolayer hexagonal boron nitride by chemical vapor deposition for ultraviolet photodetectors.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,35(12).

Zhu，Wenhui,et al."Growth of GaN on monolayer hexagonal boron nitride by chemical vapor deposition for ultraviolet photodetectors".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35.12(2020).