| 题名 | A Fully Integrated FVF LDO With Enhanced Full-Spectrum Power Supply Rejection |
| 作者 | |
| 通讯作者 | Lu，Yan |
| 发表日期 | 2021-04
|
| DOI | |
| 发表期刊 | |
| ISSN | 1941-0107
|
| 卷号 | 36期号:4页码:4326-4337 |
| 关键词 | |
| 相关链接 | [IEEE记录] |
| 收录类别 | |
| 学校署名 | 其他
|
| EI入藏号 | 20205009608580
|
| EI主题词 | Bandwidth
; Metals
; CMOS integrated circuits
; Oxide semiconductors
; Electric current regulators
; Buffer amplifiers
; MOS devices
|
| EI分类号 | Electric Equipment:704.2
; Semiconducting Materials:712.1
; Amplifiers:713.1
; Semiconductor Devices and Integrated Circuits:714.2
; Information Theory and Signal Processing:716.1
; Control Equipment:732.1
|
| ESI学科分类 | ENGINEERING
|
| 来源库 | IEEE
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9200562 |
| 引用统计 |
被引频次[WOS]：56
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/209749 |
| 专题 | 工学院_深港微电子学院 |
| 作者单位 | 1.State Key Laboratory of Analog and Mixed-Signal Vlsi,Institute of Microelectronics,FST-DECE,University of Macau,Macao 2.School of Microelectronics,Southern University of Science and Technology,Shenzhen,China 3.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Beijing,100816,China 4.Instituto Superior Técnico,Universidade de Lisboa,Lisbon,1049-001,Portugal |
| 第一作者单位 | 深港微电子学院 |
| 推荐引用方式 GB/T 7714 |
Cai，Guigang,Lu，Yan,Zhan，Chenchang,et al. A Fully Integrated FVF LDO With Enhanced Full-Spectrum Power Supply Rejection[J]. IEEE Transactions on Power Electronics,2021,36(4):4326-4337.
|
| APA |
Cai，Guigang,Lu，Yan,Zhan，Chenchang,&Martins，Rui P..(2021).A Fully Integrated FVF LDO With Enhanced Full-Spectrum Power Supply Rejection.IEEE Transactions on Power Electronics,36(4),4326-4337.
|
| MLA |
Cai，Guigang,et al."A Fully Integrated FVF LDO With Enhanced Full-Spectrum Power Supply Rejection".IEEE Transactions on Power Electronics 36.4(2021):4326-4337.
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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