题名 | Photophysical Properties of Zn-Alloyed CsPbI3 Nanocrystals |
作者 | |
通讯作者 | He, Tingchao; Chen, Rui |
发表日期 | 2020-12-10
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DOI | |
发表期刊 | |
ISSN | 1932-7447
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EISSN | 1932-7455
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卷号 | 124期号:49页码:27169-27175 |
摘要 | Deep-red luminescence emission makes CsPbI3 nanocrystals (NCs) promising materials for various applications, but their use is limited in practice by instability in moist ambient environments. Incorporating Zn into CsPbI3 NCs can help retain crystallinity and improve moisture resistance and device performance. However, a fundamental understanding of the photophysical properties of Zn-alloyed CsPbI3 NCs remains incomplete. In this study, the differences in the photophysical properties of CsPbI3 NCs and their Zn-alloyed counterparts (CsPb0.8Zn0.2I3 NCs) are highlighted. Femtosecond transient absorption spectroscopy experiments show that the rate of carrier cooling is higher in CsPb0.8Zn0.2I3 NCs than in CsPbI3 NCs, whereas the two types of NCs exhibit similar Auger recombination lifetimes and biexcition binding energies. Our experimental results show more efficient multiphoton absorption by CsPb0.8Zn0.2I3 NCs than by CsPbI3NCs. This result implies that Zn-alloyed CsPbI3 NCs are promising materials for multiphoton-excited emission-relevant applications. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 通讯
|
资助项目 | Guangdong Basic and Applied Basic Research Foundation[2019A1515012094]
; Project of Department of Education of Guangdong Province[2018KTSCX19]
; Shenzhen Fundamental Research Project of Science and Technology[JCYJ20190808121211510]
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WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
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WOS类目 | Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000599610500068
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出版者 | |
EI入藏号 | 20205209668409
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EI主题词 | Zinc alloys
; Binding energy
; Crystallinity
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EI分类号 | Zinc and Alloys:546.3
; Physical Chemistry:801.4
; Crystalline Solids:933.1
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来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:13
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/210768 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Shanghai Dianji Univ, Coll Arts & Sci, Shanghai 201306, Peoples R China 2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 3.Shenzhen Univ, Minist Educ & Guangdong Prov, Coll Phys & Optoelect Engn, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China 4.Hubei Univ, Key Lab Green Preparat & Applicat Funct Mat, Minist Educ, Sch Mat Sci & Engn, Wuhan 430062, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Zhao, Fuli,Li, Junzi,Yu, Jiahao,et al. Photophysical Properties of Zn-Alloyed CsPbI3 Nanocrystals[J]. Journal of Physical Chemistry C,2020,124(49):27169-27175.
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APA |
Zhao, Fuli.,Li, Junzi.,Yu, Jiahao.,Guo, Zhihang.,Xiao, Shuyu.,...&Chen, Rui.(2020).Photophysical Properties of Zn-Alloyed CsPbI3 Nanocrystals.Journal of Physical Chemistry C,124(49),27169-27175.
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MLA |
Zhao, Fuli,et al."Photophysical Properties of Zn-Alloyed CsPbI3 Nanocrystals".Journal of Physical Chemistry C 124.49(2020):27169-27175.
|
条目包含的文件 | 条目无相关文件。 |
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