The influence of H2O and O-2 on the optoelectronic properties of inverted quantum-dot light-emitting diodes

Chen, Zinan1,2,3; Qin, Zhiyuan1,2,3; Su, Sikai1,2,3; Chen, Shuming1,2,3,4

2021-02-01

10.1007/s12274-021-3354-7

Nano Research   影响因子和分区

1998-0124

1998-0000

The influence of H2O and O-2 on the performances of Mg-doped zinc oxide (ZnMgO) and ZnMgO-based inverted quantum-dot light-emitting diodes (QLEDs) are studied. With the involvement of H2O from ambience, ZnMgO exhibits a high conductivity, whereas the resultant QLEDs show a low efficiency. The efficiency of QLEDs can be enhanced by annealing ZnMgO in H2O-free glovebox; however, the uniformity and the current of the devices are degraded due to the presence of O-2, which adsorbs on the surface of ZnMgO and captures the free electrons of ZnMgO. By exposing the devices with ultraviolet (UV) irradiation, the adsorbed O-2 can be released, consequently leading to the increase of driving current. Our work discloses the influence of the annealing ambience on the conductivity of ZnMgO, and reveals the interaction of H2O/O-2 and UV with the ZnMgO and its effect on the performance of the resultant inverted QLEDs, which could help the community to better understand the mechanisms of ZnMgO-based QLEDs.

quantum-dot light-emitting diodes ZnMgO oxygen water

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[61775090] ; Guangdong Natural Science Funds for Distinguished Young Scholars[2016A030306017]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000621073300002

TSINGHUA UNIV PRESS

20210910009837

Efficiency ; II-VI semiconductors ; Magnesium compounds ; Nanocrystals ; Semiconductor quantum dots ; Zinc oxide

Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Production Engineering:913.1

Web of Science

1.Southern Univ Sci & Technol, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, Minist Educ, Key Lab Energy Convers & Storage Technol, Shenzhen 518055, Peoples R China

Chen, Zinan,Qin, Zhiyuan,Su, Sikai,et al. The influence of H2O and O-2 on the optoelectronic properties of inverted quantum-dot light-emitting diodes[J]. Nano Research,2021,14:4140-4145.

Chen, Zinan,Qin, Zhiyuan,Su, Sikai,&Chen, Shuming.(2021).The influence of H2O and O-2 on the optoelectronic properties of inverted quantum-dot light-emitting diodes.Nano Research,14,4140-4145.

Chen, Zinan,et al."The influence of H2O and O-2 on the optoelectronic properties of inverted quantum-dot light-emitting diodes".Nano Research 14(2021):4140-4145.