Buried Interfaces in Halide Perovskite Photovoltaics

Yang, Xiaoyu1,2; Luo, Deying1,2,3; Xiang, Yuren4; Zhao, Lichen1,2; Anaya, Miguel5; Shen, Yonglong6; Wu, Jiang1,2; Yang, Wenqiang1,2,7; Chiang, Yu-Hsien5; Tu, Yongguang8; Su, Rui1,2; Hu, Qin7,9; Yu, Hongyu3; Shao, Guosheng6; Huang, Wei8; Russell, Thomas P.7,9; Gong, Qihuang1,2,10,11; Stranks, Samuel D.5,12; Zhang, Wei4; Zhu, Rui1,2,10,11

2021-02-01

10.1002/adma.202006435

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

Understanding the fundamental properties of buried interfaces in perovskite photovoltaics is of paramount importance to the enhancement of device efficiency and stability. Nevertheless, accessing buried interfaces poses a sizeable challenge because of their non-exposed feature. Herein, the mystery of the buried interface in full device stacks is deciphered by combining advanced in situ spectroscopy techniques with a facile lift-off strategy. By establishing the microstructure-property relations, the basic losses at the contact interfaces are systematically presented, and it is found that the buried interface losses induced by both the sub-microscale extended imperfections and lead-halide inhomogeneities are major roadblocks toward improvement of device performance. The losses can be considerably mitigated by the use of a passivation-molecule-assisted microstructural reconstruction, which unlocks the full potential for improving device performance. The findings open a new avenue to understanding performance losses and thus the design of new passivation strategies to remove imperfections at the top surfaces and buried interfaces of perovskite photovoltaics, resulting in substantial enhancement in device performance.

buried interfaces imperfections microstructural reconstruction perovskite photovoltaics

SCI ; EI

英语

NI论文 ; ESI高被引

其他

National Natural Science Foundation of China[61722501,91733301,62004165,11527901,51602290] ; National Basic Research Program of China (973Program)[2015CB932203] ; EPSRC New Investigator Award[EP/R043272/1] ; Tata Group[UF150033] ; EPSRC[EP/R023980/1] ; Zhengzhou University 2019 key program for discipline construction[XKZDJC201903] ; European Union[841386] ; US Office of Naval Research[N00014-15-1-2244] ; Office of Science, Office of Basic Energy Sciences, the U.S. Department of Energy[DE-AC02-05CH11231] ; Research and Application of Key Technologies of GaN-based Power Devices on Si Substrate[2019B010128001] ; China Postdoctoral Science Foundation["BX20190018","2018M633128"] ; Marie Skodowska-Curie Individual Fellowships[839136] ; Shenzhen Basic Research Project[JCYJ20170818142926085] ; study and optimization of electrostatic discharge mechanism for GaN HEMT devices[JCYJ20180305180619573] ; research of AlGaN HEMT MEMS sensor for work in extreme environment[JCYJ20170412153356899]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000604273900001

WILEY-V C H VERLAG GMBH

20210209757954

Lead compounds ; Passivation ; Perovskite

Minerals:482.2 ; Protection Methods:539.2.1

MATERIALS SCIENCE

Web of Science

1.Peking Univ, Frontiers Sci Ctr Nanooptoelect, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
2.Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
3.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
4.Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
5.Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
6.Zhengzhou Univ, Sch Mat Sci & Engn, State Ctr Int Cooperat Designer Low Carbon & Envi, Zhengzhou 450001, Peoples R China
7.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA
8.Northwestern Polytech Univ, Xian Inst Flexible Elect IFE, Frontiers Sci Ctr Flexible Elect, Xian 710072, Peoples R China
9.Univ Massachusetts, Dept Polymer Sci & Engn, Amherst, MA 01003 USA
10.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
11.Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Jiangsu, Peoples R China
12.Univ Cambridge, Dept Chem Engn & Biotechnol, Cambridge CB3 0AS, England

Yang, Xiaoyu,Luo, Deying,Xiang, Yuren,et al. Buried Interfaces in Halide Perovskite Photovoltaics[J]. ADVANCED MATERIALS,2021,33(7).

Yang, Xiaoyu.,Luo, Deying.,Xiang, Yuren.,Zhao, Lichen.,Anaya, Miguel.,...&Zhu, Rui.(2021).Buried Interfaces in Halide Perovskite Photovoltaics.ADVANCED MATERIALS,33(7).

Yang, Xiaoyu,et al."Buried Interfaces in Halide Perovskite Photovoltaics".ADVANCED MATERIALS 33.7(2021).