Electrochemically Exfoliated Platinum Dichalcogenide Atomic Layers for High-Performance Air-Stable Infrared Photodetectors

Ma, Yaping1,2; Shao, Xiji3; Li, Jing2,8,9; Dong, Bowei4; Hu, Zhenliang5; Zhou, Qiulan6; Xu, Haomin2; Zhao, Xiaoxu7; Fang, Hanyan2; Li, Xinzhe2; Li, Zejun2; Wu, Jing8,9,10; Zhao, Meng10; Pennycook, Stephen John7; Sow, Chorng Haur5; Lee, Chengkuo4; Zhong, Yu Lin11; Lu, Junpeng12; Ding, Mengning6; Wang, Kedong3; Li, Ying1; Lu, Jiong2,8,9

2021-02-24

10.1021/acsami.0c20535

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

Platinum dichalcogenide (PtX2), an emergent group-10 transition metal dichalcogenide (TMD) has shown great potential in infrared photonic and optoelectronic applications due to its layer-dependent electronic structure with potentially suitable bandgap. However, a scalable synthesis of PtSe2 and PtTe2 atomic layers with controlled thickness still represents a major challenge in this field because of the strong interlayer interactions. Herein, we develop a facile cathodic exfoliation approach for the synthesis of solution-processable high-quality PtSe2 and PtTe2 atomic layers for high-performance infrared (IR) photodetection. As-exfoliated PtSe2 and PtTe2 bilayer exhibit an excellent photoresponsivity of 72 and 1620 mA W-1 at zero gate voltage under a 1540 nm laser illumination, respectively, approximately several orders of magnitude higher than that of the majority of IR photodetectors based on graphene, TMDs, and black phosphorus. In addition, our PtSe2 and PtTe2 bilayer device also shows a decent specific detectivity of beyond 10(9) Jones with remarkable air-stability (>several months), outperforming the mechanically exfoliated counterparts under the laser illumination with a similar wavelength. Moreover, a high yield of PtSe2 and PtTe2 atomic layers dispersed in solution also allows for a facile fabrication of air-stable wafer-scale IR photodetector. This work demonstrates a new route for the synthesis of solution-processable layered materials with the narrow bandgap for the infrared optoelectronic applications.

IR photodetectors electrochemical exfoliation bilayer PtSe2 bilayer PtTe2 air-stable

SCI ; EI

英语

通讯

MOE["MOE2019-T2-2-044","R-143-000-A75-114","MOE2017-T2-2-139"] ; NAMIC[R-143-000-B26-529] ; China Postdoctoral Science Foundation[2019M663033] ; National Natural Science Foundation of China[21703143] ; General Physics Teaching Steering Committee of the Ministry of Education of China[DJZW201931zn] ; Agency for Science, Technology and Research (A*STAR)[152700014,"H19H6a0025"] ; Australian Research Council[DP190100120]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000623228500064

AMER CHEMICAL SOC

20210909993015

Atoms ; Black Phosphorus ; Electronic structure ; Energy gap ; Photodetectors ; Photons ; Platinum ; Selenium compounds ; Transition metals

Metallurgy and Metallography:531 ; Precious Metals:547.1 ; Atomic and Molecular Physics:931.3

Web of Science

1.Shenzhen Univ, Coll Optoelect Engn,Minist Educ, SZU NUS Collaborat Innovat Ctr Optoelect Sci & Te, Int Collaborat Lab 2D Mat Optoelect Sci & Technol, Shenzhen 518060, Peoples R China
2.Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
5.Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore
6.Nanjing Univ, Key Lab Mesoscop Chem, Sch Chem & Chem Engn, Nanjing 210023, Peoples R China
7.Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore
8.Natl Univ Singapore, Ctr Adv 2D Mat, Singapore 117546, Singapore
9.Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore
10.ASTAR, Inst Mat Res & Engn, Singapore 138634, Singapore
11.Griffith Univ, Ctr Clean Environm & Energy, Sch Environm & Sci, Gold Coast, Qld 4222, Australia
12.Southeast Univ, Sch Phys, Nanjing 211189, Peoples R China

Ma, Yaping,Shao, Xiji,Li, Jing,et al. Electrochemically Exfoliated Platinum Dichalcogenide Atomic Layers for High-Performance Air-Stable Infrared Photodetectors[J]. ACS Applied Materials & Interfaces,2021,13(7):8518-8527.

Ma, Yaping.,Shao, Xiji.,Li, Jing.,Dong, Bowei.,Hu, Zhenliang.,...&Lu, Jiong.(2021).Electrochemically Exfoliated Platinum Dichalcogenide Atomic Layers for High-Performance Air-Stable Infrared Photodetectors.ACS Applied Materials & Interfaces,13(7),8518-8527.

Ma, Yaping,et al."Electrochemically Exfoliated Platinum Dichalcogenide Atomic Layers for High-Performance Air-Stable Infrared Photodetectors".ACS Applied Materials & Interfaces 13.7(2021):8518-8527.