Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance

Zhang, Yifan1; Chen, Xiaofei2; Wang, Heshen3; Dai, Junfeng3; Xue, Jianming1; Guo, Xun1

2021-01-28

10.1021/acs.jpcc.0c09666

Journal of Physical Chemistry C   影响因子和分区

1932-7447

1932-7455

Due to their small size and low power consumption, two-dimensional (2D) MoS2 devices have emerged as attractive candidates for next-generation nanoelectronics. However, in some particular working environments, such as space applications or advanced nuclear energy systems, device degradation caused by ion irradiation is a huge challenge for practical applications. Herein, the irradiation resistance of single-layer and multilayer MoS2 field effect transistors (FETs) have been systematically studied by using 2 MeV He ions. Electrical measurements show that multilayer devices can withstand 3 X 10(12) cm(-2) fluence of He ion irradiation, which is at least an order of magnitude higher than that of single-layer devices. Raman and photoluminescence (PL) spectra indicate that the defect concentration in multilayer devices is less than that of single-layer devices, even if the irradiation dose is two orders of magnitude higher, since the displacement threshold energy of Mo and S atoms significantly increases with the increasing number of MoS2 layers. The defect configuration is directly observed by aberration-corrected scanning transmission electron microscopy (AC-STEM). Our results demonstrate the extraordinary resistance of multilayer MoS2 FETs under high irradiation conditions and expand their potential applications.

SCI ; EI

英语

其他

Science Challenge Project[TZ2018004] ; National Natural Science Foundation of China[11705010,11775005,11974159] ; China Postdoctoral Science Foundation[2019M650351] ; Guangdong Natural Science Foundation[2017A030313023]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000614317500049

AMER CHEMICAL SOC

20210509853317

Defects ; Electronic properties ; Helium ; High resolution transmission electron microscopy ; Ion bombardment ; Ions ; Layered semiconductors ; Molybdenum compounds ; Multilayers ; Radiation ; Scanning electron microscopy ; Space applications

Space Flight:656 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Chemical Products Generally:804 ; High Energy Physics:932.1 ; Materials Science:951

Web of Science

1.Peking Univ, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China
2.China Inst Nucl Informat & Econ, Beijing 100048, Peoples R China
3.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China

Zhang, Yifan,Chen, Xiaofei,Wang, Heshen,et al. Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance[J]. Journal of Physical Chemistry C,2021,125(3).

Zhang, Yifan,Chen, Xiaofei,Wang, Heshen,Dai, Junfeng,Xue, Jianming,&Guo, Xun.(2021).Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance.Journal of Physical Chemistry C,125(3).

Zhang, Yifan,et al."Electronic Properties of Multilayer MoS2 Field Effect Transistor with Unique Irradiation Resistance".Journal of Physical Chemistry C 125.3(2021).