题名 | High-performance perovskite light-emitting diodes based on double hole transport layers |
作者 | |
通讯作者 | Peng, Zhengchun; Sun, Xiao Wei |
发表日期 | 2021-02-14
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DOI | |
发表期刊 | |
ISSN | 2050-7526
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EISSN | 2050-7534
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卷号 | 9期号:6页码:2115-2122 |
摘要 | Preparing perovskite light emitting diodes (PeLEDs) by a solution process leads to inevitable imbalanced carrier injection and solvent erosion, which prevent us from obtaining high-performance PeLEDs. Here, we report a facile method to fabricate green-emitting PeLEDs with double hole transport layers (HTLs) that significantly promote the hole injection and charge balance. To address the problem of solvent erosion, 1,4-dioxane was adopted as the solvent for poly(9-vinylcarbazole) (PVK) and it was cast onto the surface of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB). At the same time, an orthogonal solvent 1,4-dioxane was employed to improve the surface smoothness of the perovskite film on the double HTLs. The PeLEDs with TFB/PVK double HTLs showed a maximum current efficiency (CE) and an EQE of 53.5 cd A(-1) and 12.9%, respectively. The EQE of the device is about 1.7 and 3 times higher than that of the single HTL device with PVK and TFB, respectively. This remarkable improvement is mainly attributed to the cascade-like energy alignment of the double HTLs, which prevents charging in perovskite nanocrystals (NCs). This work offers a new insight into preparing high performance PeLEDs for displays and lighting devices. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 通讯
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资助项目 | Shenzhen Science and Technology Program[
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WOS研究方向 | Materials Science
; Physics
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WOS类目 | Materials Science, Multidisciplinary
; Physics, Applied
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WOS记录号 | WOS:000620730700024
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出版者 | |
EI入藏号 | 20210909991792
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EI主题词 | Display devices
; Erosion
; Green manufacturing
; Perovskite
; Solvents
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EI分类号 | Minerals:482.2
; Semiconductor Devices and Integrated Circuits:714.2
; Computer Peripheral Equipment:722.2
; Chemical Agents and Basic Industrial Chemicals:803
|
来源库 | Web of Science
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引用统计 |
被引频次[WOS]:22
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/221118 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Shenzhen Univ, Key Lab Optoelect Devices & Syst, Coll Phys & Optoelect Engn, Minist Educ & Guangdong Prov, Shenzhen 518060, Guangdong, Peoples R China 2.Guangdong Univ, Key Lab Adv Quantum Dot Displays & Lighting, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 4.Southern Univ Sci & Technol, Key Lab Energy Convers & Storage Technol, Minist Educ, Shenzhen 518055, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系; 南方科技大学 |
推荐引用方式 GB/T 7714 |
Wang, Weigao,Wu, Zhenghui,Ye, Taikang,et al. High-performance perovskite light-emitting diodes based on double hole transport layers[J]. Journal of Materials Chemistry C,2021,9(6):2115-2122.
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APA |
Wang, Weigao.,Wu, Zhenghui.,Ye, Taikang.,Ding, Shihao.,Wang, Kai.,...&Sun, Xiao Wei.(2021).High-performance perovskite light-emitting diodes based on double hole transport layers.Journal of Materials Chemistry C,9(6),2115-2122.
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MLA |
Wang, Weigao,et al."High-performance perovskite light-emitting diodes based on double hole transport layers".Journal of Materials Chemistry C 9.6(2021):2115-2122.
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条目包含的文件 | ||||||
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