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题名

High-performance perovskite light-emitting diodes based on double hole transport layers

作者
通讯作者Peng, Zhengchun; Sun, Xiao Wei
发表日期
2021-02-14
DOI
发表期刊
ISSN
2050-7526
EISSN
2050-7534
卷号9期号:6页码:2115-2122
摘要

Preparing perovskite light emitting diodes (PeLEDs) by a solution process leads to inevitable imbalanced carrier injection and solvent erosion, which prevent us from obtaining high-performance PeLEDs. Here, we report a facile method to fabricate green-emitting PeLEDs with double hole transport layers (HTLs) that significantly promote the hole injection and charge balance. To address the problem of solvent erosion, 1,4-dioxane was adopted as the solvent for poly(9-vinylcarbazole) (PVK) and it was cast onto the surface of poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,40-(N-(p-butylphenyl))-diphenylamine)] (TFB). At the same time, an orthogonal solvent 1,4-dioxane was employed to improve the surface smoothness of the perovskite film on the double HTLs. The PeLEDs with TFB/PVK double HTLs showed a maximum current efficiency (CE) and an EQE of 53.5 cd A(-1) and 12.9%, respectively. The EQE of the device is about 1.7 and 3 times higher than that of the single HTL device with PVK and TFB, respectively. This remarkable improvement is mainly attributed to the cascade-like energy alignment of the double HTLs, which prevents charging in perovskite nanocrystals (NCs). This work offers a new insight into preparing high performance PeLEDs for displays and lighting devices.

相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
通讯
资助项目
Shenzhen Science and Technology Program[
WOS研究方向
Materials Science ; Physics
WOS类目
Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号
WOS:000620730700024
出版者
EI入藏号
20210909991792
EI主题词
Display devices ; Erosion ; Green manufacturing ; Perovskite ; Solvents
EI分类号
Minerals:482.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2 ; Chemical Agents and Basic Industrial Chemicals:803
来源库
Web of Science
引用统计
被引频次[WOS]:22
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/221118
专题工学院_电子与电气工程系
作者单位
1.Shenzhen Univ, Key Lab Optoelect Devices & Syst, Coll Phys & Optoelect Engn, Minist Educ & Guangdong Prov, Shenzhen 518060, Guangdong, Peoples R China
2.Guangdong Univ, Key Lab Adv Quantum Dot Displays & Lighting, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, Key Lab Energy Convers & Storage Technol, Minist Educ, Shenzhen 518055, Peoples R China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系;  南方科技大学
推荐引用方式
GB/T 7714
Wang, Weigao,Wu, Zhenghui,Ye, Taikang,et al. High-performance perovskite light-emitting diodes based on double hole transport layers[J]. Journal of Materials Chemistry C,2021,9(6):2115-2122.
APA
Wang, Weigao.,Wu, Zhenghui.,Ye, Taikang.,Ding, Shihao.,Wang, Kai.,...&Sun, Xiao Wei.(2021).High-performance perovskite light-emitting diodes based on double hole transport layers.Journal of Materials Chemistry C,9(6),2115-2122.
MLA
Wang, Weigao,et al."High-performance perovskite light-emitting diodes based on double hole transport layers".Journal of Materials Chemistry C 9.6(2021):2115-2122.
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