Structural twinning-induced insulating phase in CrN (111) films

Jin, Qiao1,2,3; Wang, Zhiwen4; Zhang, Qinghua1,2; Zhao, Jiali1,2; Cheng, Hu5; Lin, Shan1,2,3; Chen, Shengru1,2,3; Chen, Shuang6; Guo, Haizhong6; He, Meng1,2; Ge, Chen1,2; Wang, Can1,2,3,7; Wang, Jia-Ou8; Gu, Lin1,2,3,7; Wang, Shanmin5; Yang, Hongxin4; Jin, Kui-juan1,2,3,7; Guo, Er-Jia1,2,7,9

2021-02-22

10.1103/PhysRevMaterials.5.023604

Physical Review Materials   影响因子和分区

2475-9953

Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this paper, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on alpha-Al2O3 (0001) substrates are oriented along the (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e.g., the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.

SCI ; EI

英语

其他

National Key Basic Research Program of China["2020YFA0309100","2019YFA0308500"] ; National Natural Science Foundation of China[11974390,52025025,52072400] ; Beijing Nova Program of Science and Technology[Z191100001119112] ; Beijing Natural Science Foundation[2202060] ; Chinese Academy of Sciences[XDB33030200]

Materials Science

Materials Science, Multidisciplinary

WOS:000620350500002

AMER PHYSICAL SOC

20211110058753

Alumina ; Aluminum oxide ; Chromium compounds ; Electron scattering ; Electronic properties ; Electronic states ; High resolution transmission electron microscopy ; Magnesia ; Metal insulator boundaries ; Metal insulator transition ; Oxide minerals ; Scanning electron microscopy ; Semiconductor insulator boundaries ; Single crystals ; Substrates

Minerals:482.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1 ; Electronic Structure of Solids:933.3

Web of Science

1.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
3.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China
4.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
5.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
6.Zhengzhou Univ, Sch Phys & Microelect, Zhengzhou 450001, Peoples R China
7.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
8.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
9.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

Jin, Qiao,Wang, Zhiwen,Zhang, Qinghua,et al. Structural twinning-induced insulating phase in CrN (111) films[J]. Physical Review Materials,2021,5(2).

Jin, Qiao.,Wang, Zhiwen.,Zhang, Qinghua.,Zhao, Jiali.,Cheng, Hu.,...&Guo, Er-Jia.(2021).Structural twinning-induced insulating phase in CrN (111) films.Physical Review Materials,5(2).

Jin, Qiao,et al."Structural twinning-induced insulating phase in CrN (111) films".Physical Review Materials 5.2(2021).