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题名

Sublattice Short-Range Order and Modified Electronic Structure in Defective Half-Heusler Nb0.8CoSb

作者
通讯作者Ge, Binghui; Zhang, Wenqing
发表日期
2021-01-14
DOI
发表期刊
ISSN
1932-7447
EISSN
1932-7455
卷号125期号:1页码:1125-1133
摘要

NbCoSb, nominally a 19-electron half-Heusler (19-HH) compound, is one of the emerging novel thermoelectric (TE) materials and has attracted much attention in recent years. By introducing a large amount of Nb vacancies, the material will be stabilized at about Nb0.8CoSb, literally becoming an 18-electron-like HH compound. However, the distribution of Nb vacancies is still in debate now. The present work reveals the unique coexistence of the long-range disorder and short-range order of vacancies in the Nb sublattice in the compound. This is obviously beyond the conventional understanding of the crystalline structure with solely long-range ordering and periodicity. The analysis of the short-range order parameters, alpha(hkl), shows that the distribution of vacancies in the sublattice has a characteristic shell distance of about 7.26 angstrom in average, indicating a deviation from nearly uniform distribution of vacancies. The simulated electron diffraction patterns are in good agreement with the experimental observation. The modified band structure of Nb0.8CoSb is also studied based on unfolding the bands of special quasirandom structures. The widening of conduction-band minimum and valence-band maximum, existence of defective states in gap area, and potential observation of gap reduction are predicted. This work may also provide new clues for searching novel TE materials with coexisting order-disorder.

相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
National Key Research and Development Program of China[
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000611410300119
出版者
EI入藏号
20210509869190
EI主题词
Defects ; Electronic structure ; Nanocrystalline materials ; Niobium compounds
EI分类号
Nanotechnology:761 ; Materials Science:951
来源库
Web of Science
引用统计
被引频次[WOS]:12
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/221269
专题理学院_物理系
量子科学与工程研究院
作者单位
1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
3.Anhui Univ, Inst Phys Sci & Informat Technol, Minist Educ, Key Lab Struct & Funct Regulat Hybrid Mat, Hefei 230601, Peoples R China
4.Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
5.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
6.Southern Univ Sci & Technol, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Guangdong, Peoples R China
7.Southern Univ Sci & Technol, Shenzhen Municipal Key Lab Adv Quantum Mat & Devi, Shenzhen 518055, Guangdong, Peoples R China
第一作者单位物理系;  量子科学与工程研究院
通讯作者单位物理系;  量子科学与工程研究院;  南方科技大学
第一作者的第一单位物理系
推荐引用方式
GB/T 7714
Tan, Shihua,Nan, Pengfei,Xia, Kaiyang,et al. Sublattice Short-Range Order and Modified Electronic Structure in Defective Half-Heusler Nb0.8CoSb[J]. Journal of Physical Chemistry C,2021,125(1):1125-1133.
APA
Tan, Shihua.,Nan, Pengfei.,Xia, Kaiyang.,Yang, Hongliang.,Zhu, Tiejun.,...&Zhang, Wenqing.(2021).Sublattice Short-Range Order and Modified Electronic Structure in Defective Half-Heusler Nb0.8CoSb.Journal of Physical Chemistry C,125(1),1125-1133.
MLA
Tan, Shihua,et al."Sublattice Short-Range Order and Modified Electronic Structure in Defective Half-Heusler Nb0.8CoSb".Journal of Physical Chemistry C 125.1(2021):1125-1133.
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