Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Wang，Dengkui1; Gao，Xian1,2; Tang，Jilong1; Fang，Xuan1; Fang，Dan1; Wang，Xinwei1; Lin，Fengyuan1; Wang，Xiaohua1; Chen，Rui2; Wei，Zhipeng1

2021-12-01

10.1038/s41598-020-80796-y

Scientific Reports   影响因子和分区

2045-2322

2045-2322

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAsSb/AlGaAs multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.

SCI

英语

其他

National Natural Science Foundation of China[61574022,61674021,11674038,61704011,61904017] ; Developing Project of Science and Technology of Jilin Province["20160520027JH","20170520117JH"] ; Youth Foundation of Changchun University of Science and Technology[XQNJJ-2018-18] ; China Postdoctoral Science Foundation[2019M652176] ; Shenzhen Fundamental Research Program[JCYJ20180307151538972]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000621920400024

NATURE RESEARCH

2-s2.0-85099393476

Scopus

1.State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun,7089 Wei-Xing Road,130022,China
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Wang，Dengkui,Gao，Xian,Tang，Jilong,et al. Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing[J]. Scientific Reports,2021,11(1).

Wang，Dengkui.,Gao，Xian.,Tang，Jilong.,Fang，Xuan.,Fang，Dan.,...&Wei，Zhipeng.(2021).Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing.Scientific Reports,11(1).

Wang，Dengkui,et al."Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing".Scientific Reports 11.1(2021).