A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs

Hang, Sheng1; Chuang, Chia-Ming5,6; Zhang, Yonghui1; Chu, Chunshuang1; Tian, Kangkai1; Zheng, Quan2; Wu, Tingzhu3; Liu, Zhaojun4; Zhang, Zi-Hui1; Li, Qing2; Kuo, Hao-Chung5,6

2021-04-15

10.1088/1361-6463/abd9a3

JOURNAL OF PHYSICS D-APPLIED PHYSICS   影响因子和分区

0022-3727

1361-6463

GaN-based micro-size light-emitting diode (mu LED) have emerged as a promising light sources for a wide range of applications in displays, visible light communication etc. In parallel with the two key technological bottlenecks: full-color scheme and mass transfer technique that need overcoming, it is known that the low external quantum efficiency (EQE) is also another challenge for mu LEDs from the perspective of manufacturing technology and device physics. The low EQE for GaN based mu LEDs is opposite to the common belief for GaN-based LEDs, such that GaN based LEDs are featured with high quantum efficiency, mechanically robust and energy saving. Therefore, in this work, we have reviewed the origin for the low EQE for mu LEDs. More importantly, we have also reported the underlying devices physics and proposed optimization strategies to boost the EQE for mu LEDs. Our work is targeted to provide a guideline for the community to develop high-performance GaN-based mu LEDs.

GaN micro-LED EQE size effect surface recombination

SCI ; EI

英语

其他

National Natural Science Foundation of China[62074050,61975051] ; Natural Science Foundation of Hebei Province["F2018202080","F2020202030"] ; State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology[EERI_PI2020008] ; Joint Research Project for Tunghsu Group[HI1909] ; Hebei University of Technology[HI1909]

Physics

Physics, Applied

WOS:000612955200001

IOP PUBLISHING LTD

20210709926571

Display devices ; Energy conservation ; Gallium nitride ; III-V semiconductors ; Light ; Light emitting diodes ; Mass transfer

Energy Conservation:525.2 ; Mass Transfer:641.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2 ; Light/Optics:741.1 ; Quantum Theory; Quantum Mechanics:931.4

PHYSICS

Web of Science

1.Hebei Univ Technol, Key Lab Elect Mat & Devices Tianjin, Sch Elect & Informat Engn, 5340 Xiping Rd, Tianjin 300401, Peoples R China
2.State Key Engn Ctr Flat Panel Display Glass & Equ, 369 Zhujiang Rd, Shijiazhuang 050035, Hebei, Peoples R China
3.Xiamen Univ, Sch Elect Sci & Engn, Dept Elect Sci, Xiamen 361005, Peoples R China
4.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
5.Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
6.Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

Hang, Sheng,Chuang, Chia-Ming,Zhang, Yonghui,et al. A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2021,54(15).

Hang, Sheng.,Chuang, Chia-Ming.,Zhang, Yonghui.,Chu, Chunshuang.,Tian, Kangkai.,...&Kuo, Hao-Chung.(2021).A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs.JOURNAL OF PHYSICS D-APPLIED PHYSICS,54(15).

Hang, Sheng,et al."A review on the low external quantum efficiency and the remedies for GaN-based micro-LEDs".JOURNAL OF PHYSICS D-APPLIED PHYSICS 54.15(2021).