Surface Engineering of Antisymmetric Linear Magnetoresistance and Spin-Polarized Surface State Transport in Dirac Semimetals

Wang，An Qi1,2; Xiang，Peng Zhan1; Ye，Xing Guo1; Zheng，Wen Zhuang1; Yu，Dapeng3; Liao，Zhi Min1,4

2021

10.1021/acs.nanolett.0c04592

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

Topological materials that possess spin-momentum locked surface states provide an ideal platform to manipulate the quantum spin states by electrical means. However, an antisymmetric magnetoresistance (MR) superimposed on the spin-polarized transport signals is usually observed in the spin potentiometric measurements of topological materials, rendering more power loss and reduced signal-to-noise ratio. Here we reveal the mechanism of surface-bulk interaction for the observed antisymmetric linear MR in the spin transport of Dirac semimetal Cd3As2 nanoplates. The antisymmetric linear MR can be eliminated through sample surface modifications. As a consequence, clean signals of charge current induced spin-polarized transport are observed, robust up to room temperature. The purification of spin signals can be attributed to the isolation of surface and bulk transport channels via forming a charge depletion layer with surface modifications. This surface engineering strategy should be valuable for high-performance spintronic devices on topological materials.

antisymmetric linear magnetoresistance charge depletion layer Dirac semimetal room-temperature spintronics spin-polarized transport surface engineering surface-bulk interaction

SCI ; EI

英语

NI期刊

其他

NSFC[91964201,61825401,11774004] ; National Key Research and Development Program of China["2018YFA0703703","2016YFA0300802"]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000629091100017

AMER CHEMICAL SOC

20211010027813

Cadmium compounds ; Magnetoresistance ; Quantum theory ; Signal to noise ratio ; Surface states ; Topology

Magnetism: Basic Concepts and Phenomena:701.2 ; Information Theory and Signal Processing:716.1 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Classical Physics; Quantum Theory; Relativity:931 ; Quantum Theory; Quantum Mechanics:931.4 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; High Energy Physics:932.1

MATERIALS SCIENCE

2-s2.0-85101906503

Scopus

1.State Key Laboratory for Mesoscopic Physics,Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing,100871,China
2.Academy for Advanced Interdisciplinary Studies,Peking University,Beijing,100871,China
3.Institute for Quantum Science and Engineering,Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.Beijing Key Laboratory of Quantum Devices,Peking University,Beijing,100871,China

Wang，An Qi,Xiang，Peng Zhan,Ye，Xing Guo,et al. Surface Engineering of Antisymmetric Linear Magnetoresistance and Spin-Polarized Surface State Transport in Dirac Semimetals[J]. NANO LETTERS,2021,21(5):2026-2032.

Wang，An Qi,Xiang，Peng Zhan,Ye，Xing Guo,Zheng，Wen Zhuang,Yu，Dapeng,&Liao，Zhi Min.(2021).Surface Engineering of Antisymmetric Linear Magnetoresistance and Spin-Polarized Surface State Transport in Dirac Semimetals.NANO LETTERS,21(5),2026-2032.

Wang，An Qi,et al."Surface Engineering of Antisymmetric Linear Magnetoresistance and Spin-Polarized Surface State Transport in Dirac Semimetals".NANO LETTERS 21.5(2021):2026-2032.