A Physics-Based Empirical Model of Dynamic IOFF Under Switching Operation in p-GaN Gate Power HEMTs

Wang，Yuru1; Chen，Tao2; Hua，Mengyuan3; Wei，Jin4; Zheng，Zheyang5; Song，Wenjie6; Yang，Song7; Zhong，Kailun8; Chen，Kevin J.9

2021-09

10.1109/TPEL.2021.3062450

IEEE Transactions on Power Electronics   影响因子和分区

1941-0107

Dynamic IOFF empirical model p-GaN gate HEMT physics-based

SCI ; EI

其他

20211010020190

Dynamics ; Electric power utilization ; Gallium nitride ; III-V semiconductors ; Power HEMT ; Switching frequency

Electric Components and Equipment:704 ; Electric Power Systems:706.1 ; Semiconductor Devices and Integrated Circuits:714.2

ENGINEERING

IEEE

1.of Electronic and Computer Engineering, Hong Kong University of Science and Technology Department of Electronic and Computer Engineering, 191607 Kowloon, Hong Kong, (e-mail: ywangfk@connect.ust.hk)
2.of Electronic and Computer Engineering, Hong Kong University of Science and Technology Department of Electronic and Computer Engineering, 191607 Kowloon, Hong Kong, (e-mail: tchenaw@connect.ust.hk)
3.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 255310 Shenzhen, Guangdong, China, (e-mail: huamy@sustech.edu.cn)
4.The Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, 58207 Kowloon, Hong Kong, (e-mail: jweiaf@connect.ust.hk)
5.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology School of Engineering, 121835 Hong Kong, Hong Kong, (e-mail: zzhengah@connect.ust.hk)
6.of Electronic and Computer Engineering, Hong Kong University of Science and Technology Department of Electronic and Computer Engineering, 191607 Kowloon, Hong Kong, (e-mail: wsongab@connect.ust.hk)
7.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, 58207 Kowloon, Hong Kong, (e-mail: syangaj@connect.ust.hk)
8.Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, 58207 Hong Kong, Hong Kong, (e-mail: kzhongac@connect.ust.hk)
9.Electronic and Computer Engineering, Hong Kong University of Science and Technology School of Engineering, 121835 Hong Kong, Hong Kong, (e-mail: eekjchen@ust.hk)

Wang，Yuru,Chen，Tao,Hua，Mengyuan,et al. A Physics-Based Empirical Model of Dynamic IOFF Under Switching Operation in p-GaN Gate Power HEMTs[J]. IEEE Transactions on Power Electronics,2021,36(9):9796-9805.

Wang，Yuru.,Chen，Tao.,Hua，Mengyuan.,Wei，Jin.,Zheng，Zheyang.,...&Chen，Kevin J..(2021).A Physics-Based Empirical Model of Dynamic IOFF Under Switching Operation in p-GaN Gate Power HEMTs.IEEE Transactions on Power Electronics,36(9),9796-9805.

Wang，Yuru,et al."A Physics-Based Empirical Model of Dynamic IOFF Under Switching Operation in p-GaN Gate Power HEMTs".IEEE Transactions on Power Electronics 36.9(2021):9796-9805.