Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements

Zhou，Guangnan1; Zeng，Fanming2; Jiang，Yang2; Wang，Qing2; Jiang，Lingli2; Xia，Guangrui3; Yu，Hongyu4

2021-04

10.1109/TED.2021.3057007

IEEE Transactions on Electron Devices   影响因子和分区

1557-9646

Gate breakdown (BD) mechanism passivation-related breakdown p-GaN high electron mobility transistor (HEMT) PiN junction breakdown

SCI ; EI

第一 ; 通讯

20210809936396

Aluminum gallium nitride ; Gallium nitride ; High electron mobility transistors ; III-V semiconductors ; Passivation ; Scanning electron microscopy ; Temperature distribution

Protection Methods:539.2.1 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2

ENGINEERING

IEEE

1.School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China, and also with the Department of Materials Engineering, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada.
2.School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China, also with the Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen 518055, China, also with the Shenzhen Institute of Wide-Bandgap Semiconductors, Southern University of Science and Technology, Shenzhen 518055, China, and also with the GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology, Shenzhen 518055, China.
3.Department of Materials Engineering, The University of British Columbia, Vancouver, BC V6T 1Z4, Canada (e-mail: guangrui.xia@ubc.ca)
4.School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China, also with the Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen 518055, China, also with the Shenzhen Institute of Wide-Bandgap Semiconductors, Southern University of Science and Technology, Shenzhen 518055, China, and also with the GaN Device Engineering Technology Research Center of Guangdong, Southern University of Science and Technology, Shenzhen 518055, China (e-mail: yuhy@sustech.edu.cn)

Zhou，Guangnan,Zeng，Fanming,Jiang，Yang,et al. Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements[J]. IEEE Transactions on Electron Devices,2021,68(4):1518-1523.

Zhou，Guangnan.,Zeng，Fanming.,Jiang，Yang.,Wang，Qing.,Jiang，Lingli.,...&Yu，Hongyu.(2021).Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements.IEEE Transactions on Electron Devices,68(4),1518-1523.

Zhou，Guangnan,et al."Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements".IEEE Transactions on Electron Devices 68.4(2021):1518-1523.