E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTHand Enhanced VTHStability

Hua，Mengyuan1; Chen，Junting1; Wang，Chengcai1; Liu，Ling1; Li，Lingling1; Zhao，Junlei1; Jiang，Zuoheng1; Wei，Jin2; Zhang，Li3; Zheng，Zheyang3; Chen，Kevin J.3

10.1109/IEDM13553.2020.9371969

2020-12-12

0163-1918

978-1-7281-8889-8

Technical Digest - International Electron Devices Meeting, IEDM

2020-December

23.1.1-23.1.4

12-18 Dec. 2020

San Francisco, CA, USA

a novel p-GaN gate topology is proposed to inherently increase threshold voltage (VTH) and enhance VTH stability. The gate consists of a conventional Schottky-type p-GaN gate and a normally-on p-channel FET bridge connecting source and gate. By modulating the VTH of the p-channel FET, a wide-range positive VTH from 3.6 V to 8.2 V can be achieved without subthreshold voltage degradation. Owing to the well-grounded p-GaN through the normally-on p-FET channel, a stable VTH is also achieved without sacrificing the low gate leakage and large gate swing enabled by the Schottky gate metal/p-GaN contact.

Temperature measurement Voltage measurement Bridge circuits Logic gates HEMTs Time measurement Topology

第一 ; 通讯

英语

EI

20211310129592

Gallium nitride ; III-V semiconductors ; Threshold voltage

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2

2-s2.0-85102957357

Scopus

1.Southern University of Science and Technology,Department of EEE,Shenzhen,China
2.Peking University,Institute of Microelectronics,Beijing,China
3.The Hong Kong University of Science and Technology,Department of ECE,Hong Kong,Hong Kong

Hua，Mengyuan,Chen，Junting,Wang，Chengcai,et al. E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTHand Enhanced VTHStability[C],2020:23.1.1-23.1.4.