A 224-Gb/s PAM4 High-Linearity, Energy-Efficiency Differential to Single-Ended Driver in 130-nm SiGe BiCMOS

Fu，Jiahan1; Cai，Pingyi2; Luo，Xiongshi1; You，Xuewei1; Zhong，Liping1; Xiao，Wenbo1; Lin，Fujiang1; Li，Yao1; Pan，Quan1

10.1109/ICTA50426.2020.9332154

2020-11-23

978-1-7281-8033-5

Proceedings of 2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020

88-89

23-25 Nov. 2020

Nanjing, China

This paper presents a reconfigurable high-linearity, energy-efficiency 112-GBaud driver with 4-level pulse amplitude modulation (PAM4) scheme in 130-nm BiCMOS. The proposed driver incorporates a continuous-time linear equalizer (CTLE), a diode-connected emitter follower, a high-pass filter (HPF) and a push-pull amplifier.By tuning the emitter degenerated resistor of the CTLE, the driver can achieve variable gain from -0.6dB to 9.3dB. A wide bandwidth is realized by utilizing an emitter degenerated capacitor. The proposed driver can transfer 224-Gb/s PAM4 eye with an energy efficiency of 0.19-pJ/b from 2.5-V supply.

224-Gb/s 4-level pulse amplitude modulation (PAM4) Continuous-time linear equalizer (CTLE). Driver

其他

英语

EI

20210709927924

BiCMOS technology ; Bismuth alloys ; Continuous time systems ; High pass filters ; Pulse amplitude modulation ; Si-Ge alloys

Energy Conservation:525.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electric Filters:703.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Systems Science:961

2-s2.0-85100991494

Scopus

1.University of Science and Technology of China,School of Microelectronics,China
2.Southern University of Science and Technology,School of Microelectronics,

Fu，Jiahan,Cai，Pingyi,Luo，Xiongshi,et al. A 224-Gb/s PAM4 High-Linearity, Energy-Efficiency Differential to Single-Ended Driver in 130-nm SiGe BiCMOS[C],2020:88-89.