Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient

Guo，Jian1; Xiao，Chen2,3; Gao，Jian2; Li，Gengzhuo4; Wu，Hanqiang2,4; Chen，Lei2; Qian，Linmao2

2021-07-01

10.1016/j.triboint.2021.107004

TRIBOLOGY INTERNATIONAL   影响因子和分区

0301-679X

Mechanical activation in mechanical removal of GaN using diamond tip and mechanochemical removal using AlO tip are described by the Archard equation and mechanically assisted Arrhenius-type kinetic model, respectively. Evident material-removal under elastic contact occurs with the assistance of interfacial mechanochemical reactions. By analyzing the mechanochemical reactions with Arrhenius-type kinetic model and Hertzian contact mechanics, the critical activation volume and activation barrier are determined semiquantitatively. The mechanical activation originating from the chemically active counter-surface facilitates the mechanochemical atomic attrition by altering the energy barrier of the reaction kinetics. This work can provide deep insights into the mechanochemical-removal mechanism of GaN.

Counter-surface chemistry GaN Mechanical activation Mechanochemical reaction

SCI ; EI

英语

其他

WOS:000639801800001

20211410166735

Alumina ; Aluminum oxide ; Deformation ; Gallium nitride ; III-V semiconductors ; Kinetic parameters ; Kinetic theory ; Reaction kinetics ; Surface reactions

Fluid Flow, General:631.1 ; Semiconducting Materials:712.1 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Classical Physics; Quantum Theory; Relativity:931

ENGINEERING

2-s2.0-85103377834

Scopus

1.School of Mechanical Engineering,University of South China,Hengyang,421001,China
2.Tribology Research Institute,State Key Laboratory of Traction Power,Southwest Jiaotong University,Chengdu,610031,China
3.Advanced Research Center for Nanolithography (ARCNL),Amsterdam,Science Park 106,1098XG,Netherlands
4.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Guo，Jian,Xiao，Chen,Gao，Jian,et al. Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient[J]. TRIBOLOGY INTERNATIONAL,2021,159.

Guo，Jian.,Xiao，Chen.,Gao，Jian.,Li，Gengzhuo.,Wu，Hanqiang.,...&Qian，Linmao.(2021).Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient.TRIBOLOGY INTERNATIONAL,159.

Guo，Jian,et al."Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient".TRIBOLOGY INTERNATIONAL 159(2021).