Electrodeposition of (111)-oriented and nanotwin-doped nanocrystalline Cu with ultrahigh strength for 3D IC application

Zheng，Zeyang1; Huang，Yu Ting1; Wang，Zhenyu1,2; Zhang，Mingyang1; Wang，Wei Ting1; Chung，Chih Chun1,3; Cherng，Sheng Jye3,4; Tsai，Ya Hui5; Li，Po Chien5; Lu，Zhouguang2; Chen，Chih Ming4; Feng，Shien Ping1

2021-05-28

10.1088/1361-6528/abe904

NANOTECHNOLOGY   影响因子和分区

0957-4484

1361-6528

The mechanical performance of electroplated Cu plays a crucial role in next-generation Cu-to-Cu direct bonding for the three-dimension integrated circuit (3D IC). This work reports direct-current electroplated (111)-preferred and nanotwin-doped nanocrystalline Cu, of which strength is at the forefront performance compared with all reported electroplated Cu materials. Tension and compression tests are performed to present the ultrahigh ultimate strength of 977 MPa and 1158 MPa, respectively. The microstructure of nanoscale Cu grains with an average grain size around 61 nm greatly contributes to the ultrahigh strength as described by the grain refinement effect. A gap between the obtained yield strength and the Hall-Petch relationship indicates the presence of extra strengthening mechanisms. X-ray diffraction and transmission electron microscopy analysis identify the highly (111) oriented texture and sporadic twins with optimum thicknesses, which can effectively impede intragranular dislocation movements, thus further advance the strength. Via filling capability and high throughput are also demonstrated in the patterned wafer plating. The combination of ultrahigh tensile/compressive strength, (111) preferred texture, superfilling capability and high throughput satisfies the critical requirement of Cu interconnects plating technology towards the industrial manufacturing in advanced 3D IC packaging application.

direct current electrodeposition nanocrystalline Cu superfilling ultrahigh strength

SCI ; EI

英语

其他

WOS:000627736100001

20211410176157

Compression testing ; Copper ; Grain refinement ; Grain size and shape ; High resolution transmission electron microscopy ; Nanocrystalline materials ; Nanocrystals ; Tensile strength ; Textures ; Throughput ; Timing circuits

Copper:544.1 ; Pulse Circuits:713.4 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Nanotechnology:761

MATERIALS SCIENCE

2-s2.0-85103479403

Scopus

1.Department of Mechanical Engineering,The University of Hong Kong,Hong Kong,Pokfulam Rd,Hong Kong
2.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,China
3.Doctech Limited,Taichung,402,Taiwan
4.Department of Chemical Engineering,National Chung Hsing University,Taichung,402,Taiwan
5.Resound Technology Inc.,Kaohsiung,806,Taiwan

Zheng，Zeyang,Huang，Yu Ting,Wang，Zhenyu,et al. Electrodeposition of (111)-oriented and nanotwin-doped nanocrystalline Cu with ultrahigh strength for 3D IC application[J]. NANOTECHNOLOGY,2021,32(22).

Zheng，Zeyang.,Huang，Yu Ting.,Wang，Zhenyu.,Zhang，Mingyang.,Wang，Wei Ting.,...&Feng，Shien Ping.(2021).Electrodeposition of (111)-oriented and nanotwin-doped nanocrystalline Cu with ultrahigh strength for 3D IC application.NANOTECHNOLOGY,32(22).

Zheng，Zeyang,et al."Electrodeposition of (111)-oriented and nanotwin-doped nanocrystalline Cu with ultrahigh strength for 3D IC application".NANOTECHNOLOGY 32.22(2021).