南方科技大学知识苑(SUSTech KC): Plasma-assisted polishing for atomic surface fabrication of single crystal SiC 面向单晶SiC原子级表面制造的等离子体辅助抛光技术

题名	Plasma-assisted polishing for atomic surface fabrication of single crystal SiC 面向单晶SiC原子级表面制造的等离子体辅助抛光技术
作者	Ji，Jian Wei1,2 ; Kazuya，Yamamura 3; Deng，Hui2
通讯作者	Deng，Hui
发表日期	2021-03-20
DOI	10.7498/aps.70.20202014
发表期刊	ACTA PHYSICA SINICA 影响因子和分区
ISSN	1000-3290
卷号	70 期号:6
摘要	At present, owing to the inherent limitations of the material characteristics of Si based semiconductor materials, Si based semiconductors are facing more and more challenges in meeting the performance requirements of the rapidly developing modern power electronic technologies used in semiconductor devices. As a new generation of semiconductor material, SiC has significant performance advantages, but it is difficult to process the SiC wafers with high-quality and high-efficiency in their industrial application. Reviewing the research progress of ultra-precision machining technology of SiC in recent years, we introduce plasma oxidation modification based highly efficient polishing technology of SiC in this paper. The material removal mechanism, typical device, modification process, and polishing result of this technology are analyzed. The analysis shows that the plasma oxidation modification possesses high removal efficiency and atomically flat surfaces without surface or subsurface damages. Furthermore, aiming at step-terrace structures produced during SiC surface processing with different polishing technologies, the generation mechanism and control strategy of periodic atomic layer step-terrace structures are discussed. Finally, the development and challenge of plasma-assisted polishing technology are prospected.
关键词	Atomic and close-to-atomic scale manufacturing Plasma Single crystal SiC Surface modification
相关链接	[Scopus记录]
收录类别	SCI ; EI
语种	中文
学校署名	第一 ; 通讯
资助项目	National Natural Science Foundation of China[52035009,52005243] ; International Cooperation from the Science and Technology Innovation Committee of Shenzhen Municipality, Shenzhen, China[GJHZ20180928155412525]
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
WOS记录号	WOS:000631862800025
出版者	CHINESE PHYSICAL SOC
EI入藏号	20211310147693
EI主题词	Crystal atomic structure ; Efficiency ; Polishing ; Semiconductor devices ; Silicon carbide ; Silicon wafers ; Single crystals ; Wide band gap semiconductors
EI分类号	Machining Operations:604.2 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Production Engineering:913.1 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1
ESI学科分类	PHYSICS
Scopus记录号	2-s2.0-85103216286
来源库	Scopus
引用统计	被引频次[WOS]：7
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/222671
专题	工学院_机械与能源工程系
作者单位	1.Institute of Frontier and Interdisciplinary Sciences,Southern University of Science and Technology,Shenzhen,518055,China 2.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,518055,China 3.Department of Precision Science and Technology,Osaka University,Osaka,5650871,Japan
第一作者单位	南方科技大学; 机械与能源工程系
通讯作者单位	机械与能源工程系
第一作者的第一单位	南方科技大学
推荐引用方式 GB/T 7714	Ji，Jian Wei,Kazuya，Yamamura,Deng，Hui. Plasma-assisted polishing for atomic surface fabrication of single crystal SiC 面向单晶SiC原子级表面制造的等离子体辅助抛光技术[J]. ACTA PHYSICA SINICA,2021,70(6).
APA	Ji，Jian Wei,Kazuya，Yamamura,&Deng，Hui.(2021).Plasma-assisted polishing for atomic surface fabrication of single crystal SiC 面向单晶SiC原子级表面制造的等离子体辅助抛光技术.ACTA PHYSICA SINICA,70(6).
MLA	Ji，Jian Wei,et al."Plasma-assisted polishing for atomic surface fabrication of single crystal SiC 面向单晶SiC原子级表面制造的等离子体辅助抛光技术".ACTA PHYSICA SINICA 70.6(2021).