中文版 | English
题名

Strain engineering of epitaxial oxide heterostructures beyond substrate limitations

作者
通讯作者Chen,Deyang
发表日期
2021
DOI
发表期刊
ISSN
2590-2393
EISSN
2590-2385
卷号4页码:1323-1334
摘要
The limitation of commercial single-crystal substrates and the lack of continuous strain tunability preclude the ability to take full advantage of strain engineering for further exploring novel properties and exhaustively studying fundamental physics in complex oxides. Here, we report an approach for imposing continuously tunable epitaxial strain in oxide heterostructures beyond substrate limitations by inserting an interface layer through tailoring of its gradual strain relaxation. Taking BiFeO as a model system, we demonstrate the introduction of an ultrathin interface layer that allows the creation of desired strain states that can induce phase transition and stabilize a super-tetragonal phase as well as morphotropic phase boundaries, overcoming substrate limitations. Continuously tunable strain from tension to compression can be generated by precisely adjusting the interface layer thickness, enabling the achievement of continuous orthorhombic–rhombohedral-like–tetragonal-like phase transition. This proposed route could be extended to other oxide heterostructures, providing a platform for creating exotic phases and emergent phenomena.
关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
WOS记录号
WOS:000637800400004
EI入藏号
20211310155405
EI主题词
Bismuth compounds ; Ground state ; Interface states ; Iron compounds ; Neodymium compounds ; Oxide films ; Phase boundaries ; Single crystals ; Strain relaxation ; Strontium titanates ; Superconducting materials ; Thin films ; Titanium compounds
EI分类号
Superconducting Materials:708.3 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Classical Physics; Quantum Theory; Relativity:931 ; Mechanics:931.1 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Crystalline Solids:933.1
Scopus记录号
2-s2.0-85103251345
来源库
Scopus
引用统计
被引频次[WOS]:25
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/222774
专题理学院_物理系
作者单位
1.Institute for Advanced Materials,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou,510006,China
2.Guangdong Provincial Key Laboratory of Optical Information Materials and Technology,South China Academy of Advanced Optoelectronics,South China Normal University,Guangzhou,510006,China
3.Department of Physics and Center for Quantum Materials,The Hong Kong University of Science and Technology,Kowloon,Clear Water Bay,China
4.Department of Applied Physics,The Hong Kong Polytechnic University,Kowloon,Hung Hom,China
5.Institute of High Energy Physics,Chinese Academy of Sciences,Beijing,100049,China
6.National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei,230026,China
7.Department of Physics,Southern University of Science and Technology,Shenzhen,Nanshan District,518055,China
8.National Center for International Research on Green Optoelectronics,South China Normal University,Guangzhou,510006,China
9.Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,210093,China
推荐引用方式
GB/T 7714
Deng,Xiong,Chen,Chao,Chen,Deyang,et al. Strain engineering of epitaxial oxide heterostructures beyond substrate limitations[J]. Matter,2021,4:1323-1334.
APA
Deng,Xiong.,Chen,Chao.,Chen,Deyang.,Cai,Xiangbin.,Yin,Xiaozhe.,...&Liu,Jun Ming.(2021).Strain engineering of epitaxial oxide heterostructures beyond substrate limitations.Matter,4,1323-1334.
MLA
Deng,Xiong,et al."Strain engineering of epitaxial oxide heterostructures beyond substrate limitations".Matter 4(2021):1323-1334.
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