| 题名 | Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT |
| 作者 | |
| 通讯作者 | Hua，Mengyuan |
| 发表日期 | 2021-05
|
| DOI | |
| 发表期刊 | |
| ISSN | 1558-0563
|
| 卷号 | 42期号:5页码:669-672 |
| 关键词 | |
| 相关链接 | [IEEE记录] |
| 收录类别 | |
| 学校署名 | 第一
; 通讯
|
| EI入藏号 | 20211310151580
|
| EI主题词 | Gallium nitride
; III-V semiconductors
; Leakage currents
; Semiconductor junctions
|
| EI分类号 | Electricity: Basic Concepts and Phenomena:701.1
; Semiconductor Devices and Integrated Circuits:714.2
|
| ESI学科分类 | ENGINEERING
|
| 来源库 | IEEE
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9383262 |
| 引用统计 |
被引频次[WOS]：15
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/222775 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Department of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen, China. 2.Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong. 3.Institute of Microelectronics, Peking University, Beijing, China and Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Kowloon, Hong Kong. |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Hua，Mengyuan,Wang，Chengcai,Chen，Junting,et al. Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT[J]. IEEE Electron Device Letters,2021,42(5):669-672.
|
| APA |
Hua，Mengyuan.,Wang，Chengcai.,Chen，Junting.,Zhao，Junlei.,Yang，Song.,...&Chen，Kevin J..(2021).Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT.IEEE Electron Device Letters,42(5),669-672.
|
| MLA |
Hua，Mengyuan,et al."Gate Current Transport in Enhancement-Mode p-n Junction/AlGaN/GaN (PNJ) HEMT".IEEE Electron Device Letters 42.5(2021):669-672.
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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