Multi-channel nanowire devices for efficient power conversion

Nela，L.1; Ma，J.1,2; Erine，C.1; Xiang，P.3; Shen，T. H.4; Tileli，V.4; Wang，T.1; Cheng，K.3; Matioli，E.1

2021

10.1038/s41928-021-00550-8

Nature Electronics   影响因子和分区

2520-1131

2520-1131

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low electrical conductivity and limited voltage capability of the nanowires. Here, we show that wide-band-gap AlGaN/GaN nanowires containing multiple two-dimensional electron gas channels can be used to create high-electron-mobility tri-gate transistors for power-conversion applications. The multiple channels lead to improved conductivity in the nanowires, and a three-dimensional field-plate design is used to manage the high electric field. Power devices made with 15-nm-wide nanowires are shown to exhibit low specific on resistances of 0.46 mΩ cm, enhancement-mode operation, improved dynamic behaviour and breakdown voltages as high as 1,300 V.

SCI ; EI

英语

其他

European Research Council (ERC) under the European Union[679425] ; Swiss National Science Foundation (SNSF)["PYAPP2_166901","200021_169362"] ; ECSEL Joint Undertaking (JU)[826392]

Engineering

Engineering, Electrical & Electronic

WOS:000632785500001

NATURE RESEARCH

20211310149178

Aluminum gallium nitride ; Digital devices ; Electric fields ; Energy gap ; Gallium nitride ; High electron mobility transistors ; III-V semiconductors ; Multiple-gate field-effect transistors ; Nanowires ; Two dimensional electron gas ; Wide band gap semiconductors

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Solid State Physics:933

2-s2.0-85103219550

Scopus

1.Power and Wide-band-gap Electronics Research Laboratory (POWERlab),Institute of Electrical Engineering (IEL),École Polytechnique Fédérale de Lausanne,Lausanne,Switzerland
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,China
3.Enkris Semiconductor Inc.,Suzhou,China
4.Institute of Materials (IMX),École Polytechnique Fédérale de Lausanne,Lausanne,Switzerland

Nela，L.,Ma，J.,Erine，C.,et al. Multi-channel nanowire devices for efficient power conversion[J]. Nature Electronics,2021,4(4):284-290.

Nela，L..,Ma，J..,Erine，C..,Xiang，P..,Shen，T. H..,...&Matioli，E..(2021).Multi-channel nanowire devices for efficient power conversion.Nature Electronics,4(4),284-290.

Nela，L.,et al."Multi-channel nanowire devices for efficient power conversion".Nature Electronics 4.4(2021):284-290.