| 题名 | Suppressing the Trap‐assisted Recombination for High Performance InP/ZnS Green Quantum‐dot Light‐emitting Diodes |
| 作者 | |
| 通讯作者 | Xiao Wei Sun |
| 发表日期 | 2021-02-24
|
| DOI | |
| 发表期刊 | |
| ISSN | 0097-966X
|
| EISSN | 2168-0159
|
| 卷号 | 52期号:S1页码:259-262 |
| 摘要 | The performance of InP/ZnS quantum dot light-emitting diodes are seriously limited by the large amount of surface traps on InP/ZnS quantum dots and the efficient exciton quenching at the interface between quantum dots and ZnO transport layer. This work provided physical understanding on these problems and approaches to address them. As a result, high efficiency InP/ZnS quantum dot light-emitting diodes were fabricated. |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| EI入藏号 | 20213710880454
|
| EI主题词 | Diodes
; II-VI semiconductors
; III-V semiconductors
; Indium phosphide
; Nanocrystals
; Oxide minerals
; Quantum chemistry
; Quantum efficiency
; Semiconducting indium phosphide
; Semiconductor quantum dots
; Zinc oxide
|
| EI分类号 | Minerals:482.2
; Compound Semiconducting Materials:712.1.2
; Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Physical Chemistry:801.4
; Inorganic Compounds:804.2
; Quantum Theory; Quantum Mechanics:931.4
|
| 来源库 | 人工提交
|
| 引用统计 |
被引频次[WOS]：0
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/226046 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Guangdong University Key Lab for Advanced Quantum Dot Displays and Lighting, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055 China 2.Shenzhen Planck Innovation Technologies Pte Ltd, Huancheng South Road, Longgang, Shenzhen, 518129 China |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Zhenghui Wu,Wenda Zhang,Pai Liu,等. Suppressing the Trap‐assisted Recombination for High Performance InP/ZnS Green Quantum‐dot Light‐emitting Diodes[J]. SID Symposium Digest of Technical Papers,2021,52(S1):259-262.
|
| APA |
Zhenghui Wu,Wenda Zhang,Pai Liu,Kai Wang,&Xiao Wei Sun.(2021).Suppressing the Trap‐assisted Recombination for High Performance InP/ZnS Green Quantum‐dot Light‐emitting Diodes.SID Symposium Digest of Technical Papers,52(S1),259-262.
|
| MLA |
Zhenghui Wu,et al."Suppressing the Trap‐assisted Recombination for High Performance InP/ZnS Green Quantum‐dot Light‐emitting Diodes".SID Symposium Digest of Technical Papers 52.S1(2021):259-262.
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| sdtp.14450.pdf（666KB） | -- | -- | 限制开放 | -- | ||
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