| 题名 | Thermal characteristics of InGaN-based green micro-LEDs |
| 作者 | |
| 通讯作者 | Liu，Zhaojun |
| 发表日期 | 2021-04-01
|
| DOI | |
| 发表期刊 | |
| EISSN | 2158-3226
|
| 卷号 | 11期号:4 |
| 摘要 | We have investigated the thermal characteristics of InGaN-based green micro-light-emitting diodes (micro-LEDs) without the passivation layer in a wide junction temperature range of 298-453 K. The decreased temperature coefficient (dV/dT) of the device with a smaller device size is attributed to the increased series resistances for the smaller devices, largely affected by the defects due to sidewall damage of the active layer. The ideality factor of 2.02 at 298 K suggests that the charge transport mechanism could be defect-assisted tunneling. In addition, it is observed that the ideality factor decreases with increasing temperature. The results of the C-V measurements suggest similar electron and hole concentrations in the depletion region, leading to a balanced electron-hole recombination in the active layer. It was also found that the temperature-dependent bandgaps of ternary InGaN obtained from electroluminescence spectra of micro-LEDs agree with the calculated values by using the semi-empirical Varshni relationship. |
| 相关链接 | [Scopus记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| WOS研究方向 | Science & Technology - Other Topics
; Materials Science
; Physics
|
| WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
|
| WOS记录号 | WOS:000721107800002
|
| 出版者 | |
| EI入藏号 | 20211810276339
|
| EI主题词 | Defects
; Electric resistance
; Electroluminescence
; Gallium alloys
; III-V semiconductors
; Indium alloys
; Passivation
; Semiconductor alloys
; Temperature
|
| EI分类号 | Protection Methods:539.2.1
; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3
; Thermodynamics:641.1
; Electricity: Basic Concepts and Phenomena:701.1
; Semiconductor Devices and Integrated Circuits:714.2
; Materials Science:951
|
| Scopus记录号 | 2-s2.0-85104851635
|
| 来源库 | Scopus
|
| 引用统计 |
被引频次[WOS]：2
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/227754 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Feng，Yang,Zhanghu，Mengyuan,Hyun，Byung Ryool,et al. Thermal characteristics of InGaN-based green micro-LEDs[J]. AIP Advances,2021,11(4).
|
| APA |
Feng，Yang,Zhanghu，Mengyuan,Hyun，Byung Ryool,&Liu，Zhaojun.(2021).Thermal characteristics of InGaN-based green micro-LEDs.AIP Advances,11(4).
|
| MLA |
Feng，Yang,et al."Thermal characteristics of InGaN-based green micro-LEDs".AIP Advances 11.4(2021).
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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