Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors

Zou，Jingyun1; Cai，Zhengyang1; Lai，Yongjue1; Tan，Junyang1; Zhang，Rongjie1; Feng，Simin1; Wang，Gang2; Lin，Junhao2; Liu，Bilu1; Cheng，Hui Ming1,3

2021

10.1021/acsnano.1c00596

ACS Nano   影响因子和分区

1936-0851

1936-086X

Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report in situ chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS2. Artificial synaptic transistors were fabricated using the heavily doped MoS2 as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors.

2D materials molybdenum disulfide MoS2 substitutional doping synaptic transistor vanadium

SCI ; EI

英语

NI论文

其他

National Natural Science Foundation of China[51920105002,51991340,51991343,51722206,11974156] ; Youth 1000-Talent Program of China, Guangdong Innovative and Entrepreneurial Research Team Program["2017ZT07C341","2019ZT08C044"] ; Bureau of Industry and Information Technology of Shenzhen[201901171523] ; Shenzhen Basic Research Project["JCYJ20200109144620815","JCYJ20200109144616617","KQTD20190929173815000"]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000645436800119

AMER CHEMICAL SOC

20211810297976

Chemical vapor deposition ; Electronic properties ; Layered semiconductors ; Molybdenum compounds ; Monolayers ; Semiconductor doping ; Transistors

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2

2-s2.0-85105001048

Scopus

1.Shenzhen Geim Graphene Center,Tsinghua-Berkeley Shenzhen Institute,Institute of Materials Research,Tsinghua Shenzhen International Graduate School,Tsinghua University,Shenzhen,518055,China
2.Department of Physics,SUSTech Core Research Facilities,Southern University of Science and Technology,Shenzhen,518055,China
3.Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang,110016,China

Zou，Jingyun,Cai，Zhengyang,Lai，Yongjue,et al. Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors[J]. ACS Nano,2021,15(4):7340-7347.

Zou，Jingyun.,Cai，Zhengyang.,Lai，Yongjue.,Tan，Junyang.,Zhang，Rongjie.,...&Cheng，Hui Ming.(2021).Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors.ACS Nano,15(4),7340-7347.

Zou，Jingyun,et al."Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors".ACS Nano 15.4(2021):7340-7347.