Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs

Chen，Junting1; Hua，Mengyuan2; Wang，Chengcai2; Liu，Ling2; Li，Lingling2; Wei，Jin3; Zhang，Li4; Zheng，Zheyang4; Chen，Kevin J.4

2021-07

10.1109/LED.2021.3077081

IEEE Electron Device Letters   影响因子和分区

1558-0563

p-GaN HEMT p-FET bridge reverse conduction

SCI ; EI

第一 ; 通讯

20212010370670

Aluminum alloys ; Aluminum gallium nitride ; Bridges ; Computer circuits ; Gallium alloys ; Gallium nitride ; III-V semiconductors ; Semiconductor alloys ; Threshold voltage

Bridges:401.1 ; Aluminum Alloys:541.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Circuits:721.3 ; Inorganic Compounds:804.2

ENGINEERING

IEEE

1.Department of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen, China, and Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong. (e-mail: jchenfc@connect.ust.hk)
2.Department of Electrical and Electronic Engineering, The Southern University of Science and Technology, Shenzhen, China.
3.Institute of Microelectronics, Peking University, Beijing, China.
4.Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong.

Chen，Junting,Hua，Mengyuan,Wang，Chengcai,et al. Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs[J]. IEEE Electron Device Letters,2021,42(7):986-989.

Chen，Junting.,Hua，Mengyuan.,Wang，Chengcai.,Liu，Ling.,Li，Lingling.,...&Chen，Kevin J..(2021).Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs.IEEE Electron Device Letters,42(7),986-989.

Chen，Junting,et al."Decoupling of Forward and Reverse Turn-on Threshold Voltages in Schottky-Type p-GaN Gate HEMTs".IEEE Electron Device Letters 42.7(2021):986-989.