Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides

Wang, Qun1; Shi, Run1,2,3; Zhao, Yaxuan1; Huang, Runqing1; Wang, Zixu1; Amini, Abbas4; Cheng, Chun1

2021-05-01

10.1039/d1na00171j

Nanoscale Advances   影响因子和分区

2516-0230

2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties. Chemical vapor deposition (CVD) is generally a promising method to prepare ideal TMD films with high uniformity, large domain size, good single-crystallinity, etc., at wafer-scale for commercial uses. However, the CVD-grown TMD samples often suffer from poor quality due to the improper control of reaction kinetics and lack of understanding about the phenomenon. In this review, we focus on several key challenges in the controllable CVD fabrication of high-quality wafer-scale TMD films and highlight the importance of the control of precursor concentration, nucleation density, and oriented growth. The remaining difficulties in the field and prospective directions of the related topics are further summarized.

SCI ; EI

英语

第一 ; 通讯

National Natural Science Foundation of China[51776094,91963129] ; Foundation of Shenzhen Science and Technology Innovation Committee[JCYJ20180302174021198] ; Basic Research Project of Science and Technology Plan of Shenzhen[JCYJ20180504165655180]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000656979500001

ROYAL SOC CHEMISTRY

20212510520378

Crystallinity ; Quality control ; Reaction kinetics ; Transition metals

Metallurgy and Metallography:531 ; Chemical Reactions:802.2 ; Quality Assurance and Control:913.3

Web of Science

1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
3.Hong Kong Univ Sci & Technol, Ctr Quantum Mat, Hong Kong, Peoples R China
4.Western Sydney Univ, Ctr Infrastruct Engn, Kingswood, NSW 2751, Australia

Wang, Qun,Shi, Run,Zhao, Yaxuan,et al. Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides[J]. Nanoscale Advances,2021,3:3430-3440.

Wang, Qun.,Shi, Run.,Zhao, Yaxuan.,Huang, Runqing.,Wang, Zixu.,...&Cheng, Chun.(2021).Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides.Nanoscale Advances,3,3430-3440.

Wang, Qun,et al."Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides".Nanoscale Advances 3(2021):3430-3440.