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题名

Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films

作者
通讯作者Su, Longxing; Zhu, Yuan; Xie, Jin; Tang, Zikang
发表日期
2021-09-05
DOI
发表期刊
ISSN
0925-8388
EISSN
1873-4669
卷号874
摘要
II-VI ternary alloy is a promising material for advanced optoelectronic devices like ultraviolet (UV) photodetectors, light emitting diodes and laser diodes with high efficiency and low fabrication cost. The precise control over the doping element, concentration and crystal quality allows careful tuning of their band structures for novel optoelectronic properties. In this work, we report a prominent two-mode behavior in ternary BexZn1-xO alloy using resonant Raman spectroscopy as a probe. By combining with the excitonic localization and extrinsic Frohlich interaction, we present a theoretical analysis on the resonant Raman scattering with different Be concentrations and tunable measured temperatures. Frequency blue shifts caused by compressed stress and two-mode phonons (ZnO-like and BeO-like A(1)(LO) phonons) scattering up to third orders revealed in this novel ternary alloy. In addition, alloying induced disorder and electronic states in the forbidden band result in the broadening of line width and the enhancement of LO-phonon oscillator strength. As a result, a high performance BeZnO based photoconductive type UV photodetector was realized, indicating the potential of BeZnO as a promising material for optoelectronic devices. (C) 2021 Elsevier B.V. All rights reserved.
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相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
通讯
资助项目
National Natural Science Foundation of China[61705043] ; Science and Technology Commission of Shanghai Municipality[19YF1433300] ; Natural Science Foundation of Jiangsu Province[BK20160568]
WOS研究方向
Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目
Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
WOS记录号
WOS:000653090800006
出版者
EI入藏号
20212310455811
EI主题词
Alloying ; Blue shift ; II-VI semiconductors ; Photodetectors ; Photons ; Quality control ; Raman scattering ; Semiconductor doping ; Ternary alloys ; Zinc oxide
EI分类号
Metallurgy:531.1 ; Semiconducting Materials:712.1 ; Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Quality Assurance and Control:913.3 ; Atomic and Molecular Physics:931.3
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:4
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/229430
专题工学院_深港微电子学院
作者单位
1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Guangdong, Peoples R China
3.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 519000, Macao, Peoples R China
通讯作者单位深港微电子学院
推荐引用方式
GB/T 7714
Su, Longxing,Zhu, Yuan,An, Yuanyuan,et al. Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2021,874.
APA
Su, Longxing,Zhu, Yuan,An, Yuanyuan,Xie, Jin,&Tang, Zikang.(2021).Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films.JOURNAL OF ALLOYS AND COMPOUNDS,874.
MLA
Su, Longxing,et al."Alloying induced disorder and localized excitonic states in ternary BexZn1-xO thin films".JOURNAL OF ALLOYS AND COMPOUNDS 874(2021).
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