中文版 | English
题名

Stacking faults in alpha-RuCl3 revealed by local electric polarization

作者
通讯作者He, Mingquan
发表日期
2021-05-11
DOI
发表期刊
ISSN
2469-9950
EISSN
2469-9969
卷号103期号:17
摘要

We present out-of-plane dielectric and magnetodielectric measurements of single-crystalline alpha-RuCl3 with various degrees of stacking faults. A frequency-dependent, but field-independent, dielectric anomaly appears at T-A (f = 100 kHz) similar to 4 K once both magnetic transitions at TN1 similar to 7 K and T-N2 similar to 14 K set in. The observed dielectric anomaly is attributed to the emergence of possible local electric polarizations whose inversion symmetry is broken by inhomogeneously distributed stacking faults. A field-induced intermediate phase is only observed when a magnetic field is applied perpendicular to the Ru-Ru bonds for samples with minimal stacking faults. Less pronounced in-plane anisotropy is found in samples with a sizable contribution from stacking imperfections. Our findings suggest that dielectric measurement is a sensitive probe in detecting the structural and magnetic properties, which may be a promising tool, especially in studying alpha-RuCl3 thin-film devices. Moreover, the stacking details of RuCl3 layers strongly affect the ground state both in the magnetic and electric channels. Such a fragile ground state against stacking faults needs to be overcome for realistic applications utilizing the magnetic and/or electric properties of Kitaev-based physics in alpha-RuCl3.

相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
National Natural Science Foundation of China[11874193,11904040,12047564,11674384,11974065,12004056] ; Chongqing Research Program of Basic Research and Frontier Technology, China[cstc2020jcyj-msxmX0263] ; Fundamental Research Funds for the Central Universities, China[
WOS研究方向
Materials Science ; Physics
WOS类目
Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000655863000002
出版者
EI入藏号
20212110405722
EI主题词
Binary alloys ; Chlorine compounds ; Ground state ; Magnetism ; Polarization ; Thin film devices
EI分类号
Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Crystal Lattice:933.1.1
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:15
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/229441
专题理学院_物理系
作者单位
1.Chongqing Univ, Low Temp Phys Lab, Coll Phys, Chongqing 401331, Peoples R China
2.Chongqing Univ, Ctr Quantum Mat & Devices, Chongqing 401331, Peoples R China
3.Forschungszentrum Julich, Julich Ctr Neutron Sci JCNS, Heinz Maier Leibnitz Zentrum MLZ, Lichtenbergstr 1, D-85747 Garching, Germany
4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714
Mi, Xinrun,Wang, Xiao,Gui, Hengrui,et al. Stacking faults in alpha-RuCl3 revealed by local electric polarization[J]. PHYSICAL REVIEW B,2021,103(17).
APA
Mi, Xinrun.,Wang, Xiao.,Gui, Hengrui.,Pi, Maocai.,Zheng, Tingting.,...&He, Mingquan.(2021).Stacking faults in alpha-RuCl3 revealed by local electric polarization.PHYSICAL REVIEW B,103(17).
MLA
Mi, Xinrun,et al."Stacking faults in alpha-RuCl3 revealed by local electric polarization".PHYSICAL REVIEW B 103.17(2021).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可 操作
PhysRevB.103.174413-(1718KB)----限制开放--
个性服务
原文链接
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
导出为Excel格式
导出为Csv格式
Altmetrics Score
谷歌学术
谷歌学术中相似的文章
[Mi, Xinrun]的文章
[Wang, Xiao]的文章
[Gui, Hengrui]的文章
百度学术
百度学术中相似的文章
[Mi, Xinrun]的文章
[Wang, Xiao]的文章
[Gui, Hengrui]的文章
必应学术
必应学术中相似的文章
[Mi, Xinrun]的文章
[Wang, Xiao]的文章
[Gui, Hengrui]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
[发表评论/异议/意见]
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。