南方科技大学知识苑(SUSTech KC): A 50–82 GHz broadband cascode-based power amplifier in 40 nm CMOS

题名	A 50–82 GHz broadband cascode-based power amplifier in 40 nm CMOS
作者	Mosalam，Hamed 1,2,3; Xiao，Wenbo1,2 ; Pan，Quan1,2
通讯作者	Pan，Quan
发表日期	2021-07-01
DOI	10.1016/j.aeue.2021.153824
发表期刊	AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS 影响因子和分区
ISSN	1434-8411
EISSN	1618-0399
卷号	137
摘要	In this paper, we present a broadband two-stage cascode-based power amplifier (PA) in 40 nm CMOS technology that covers the ISM band applications at 60 GHz, E-band applications channels (71–76 GHz, 77 GHz, 81–86 GHz), and Automotive radar application at 77 GHz. The bypass capacitor at the gate of the upper transistor of the cascode, which controls the swing, stability, and gain compression significantly, is studied and optimized carefully. Furthermore, a holistic design approach is provided to further optimize the input, output and interstage wideband matching networks to simultaneously improve the output power and gain performance over the whole operating frequency band. The measurement results show a power gain of 13 ± 1.5 dB, a maximum power added efficiency (PAE) and output gain compression point (P) of 15% and 11 dBm, respectively, while consuming 130 mW. Additionally, the PA achieves low measured group delay variations of 20 ± 10 ps and small measured AM-PM distortion < 3 degrees over the whole band.
关键词	CMOS E-band Millimeter-wave (mm–wave) Power Added Efficiency (PAE) Power amplifier (PA)
相关链接	[Scopus记录]
收录类别	SCI ; EI
语种	英语
学校署名	第一 ; 通讯
资助项目	Natural Science Foundation of Guangdong Province[2021A1515011266] ; National Natural Science Foundation of China[62074074] ; Science and Technology Plan of Shenzhen["JCYJ20190809142017428","JCYJ20200109141225025"]
WOS研究方向	Engineering ; Telecommunications
WOS类目	Engineering, Electrical & Electronic ; Telecommunications
WOS记录号	WOS:000659985100030
出版者	ELSEVIER GMBH
EI入藏号	20212310452755
EI主题词	Analog circuits ; Automotive radar ; Broadband amplifiers ; Cascode amplifiers ; CMOS integrated circuits ; Efficiency ; Group delay ; Millimeter waves
EI分类号	Electric Networks:703.1 ; Electromagnetic Waves:711 ; Electronic Circuits:713 ; Amplifiers:713.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Radar Systems and Equipment:716.2 ; Production Engineering:913.1
ESI学科分类	COMPUTER SCIENCE
Scopus记录号	2-s2.0-85107062562
来源库	Scopus
引用统计	被引频次[WOS]：9
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/229515
专题	工学院_深港微电子学院
作者单位	1.School of Microelectronics,Southern University of Science and Technology,China 2.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,China 3.Department of Microelectronics,Electronics Research Institute,Egypt
第一作者单位	深港微电子学院
通讯作者单位	深港微电子学院
第一作者的第一单位	深港微电子学院
推荐引用方式 GB/T 7714	Mosalam，Hamed,Xiao，Wenbo,Pan，Quan. A 50–82 GHz broadband cascode-based power amplifier in 40 nm CMOS[J]. AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS,2021,137.
APA	Mosalam，Hamed,Xiao，Wenbo,&Pan，Quan.(2021).A 50–82 GHz broadband cascode-based power amplifier in 40 nm CMOS.AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS,137.
MLA	Mosalam，Hamed,et al."A 50–82 GHz broadband cascode-based power amplifier in 40 nm CMOS".AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS 137(2021).