题名 | Dissolution-precipitation growth of doped monolayer molybdenum disulfide through double-faced precursor supply |
作者 | |
通讯作者 | Liu,Bilu |
发表日期 | 2021-05-01
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DOI | |
发表期刊 | |
EISSN | 2166-532X
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卷号 | 9期号:5 |
摘要 | Substitutional doping is a powerful strategy to modulate the properties and functionalities of two-dimensional (2D) materials while control of dopants during the process is still challenging. Recently, we invented a dissolution-precipitation (DP) method to grow 2D materials. Here, we further extend this method by developing a double-faced precursor supply DP growth strategy to substitutionally dope metal atoms into monolayer MoS2 lattices. In this double-faced precursor supply DP method, the Mo source and dopant source are supplied from the bottom and top surface of the glass substrate, respectively, to separate their diffusion paths. As a result, monolayer MoS2 incorporated with different concentrations of V atoms were grown by tuning the amount of V precursor, which exhibited different types of electrical transport properties. This new doping method is universal in growing several transition metal atom doped MoS2, including Re, Fe, and Cr, which will extend the applications of 2D materials. |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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WOS记录号 | WOS:000705901600002
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EI入藏号 | 20212210428409
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EI主题词 | Atoms
; Dissolution
; Layered semiconductors
; Molybdenum compounds
; Substrates
; Sulfur compounds
; Transition metals
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EI分类号 | Metallurgy and Metallography:531
; Chemical Operations:802.3
; Atomic and Molecular Physics:931.3
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Scopus记录号 | 2-s2.0-85106573461
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来源库 | Scopus
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引用统计 |
被引频次[WOS]:7
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/229592 |
专题 | 理学院_物理系 |
作者单位 | 1.Shenzhen Geim Graphene Center,Tsinghua-Berkeley Shenzhen Institute,Institute of Materials Research,Tsinghua Shenzhen International Graduate School,Tsinghua University,Shenzhen,518055,China 2.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China |
推荐引用方式 GB/T 7714 |
Lai,Yongjue,Tan,Junyang,Cai,Zhengyang,et al. Dissolution-precipitation growth of doped monolayer molybdenum disulfide through double-faced precursor supply[J]. APL Materials,2021,9(5).
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APA |
Lai,Yongjue.,Tan,Junyang.,Cai,Zhengyang.,Zhang,Rongjie.,Teng,Changjiu.,...&Liu,Bilu.(2021).Dissolution-precipitation growth of doped monolayer molybdenum disulfide through double-faced precursor supply.APL Materials,9(5).
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MLA |
Lai,Yongjue,et al."Dissolution-precipitation growth of doped monolayer molybdenum disulfide through double-faced precursor supply".APL Materials 9.5(2021).
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条目包含的文件 | 条目无相关文件。 |
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