| 题名 | Study of bilayer Al2O3/in-situ SiNxdielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs |
| 作者 | |
| 通讯作者 | Wang，Qing; Yu，Hongyu |
| DOI | |
| 发表日期 | 2021-04-08
|
| 会议名称 | 5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
|
| ISBN | 978-1-7281-8177-6
|
| 会议录名称 | |
| 页码 | 1-3
|
| 会议日期 | APR 08-11, 2021
|
| 会议地点 | null,Chengdu,PEOPLES R CHINA
|
| 出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA
|
| 出版者 | |
| 摘要 | The bilayer Al2O3/in-situ SiNx gate dielectric stacks were applied to fabricate high-performance AlGaN/GaN MIS-HEMTs. Both the normally-off and normally-on operations were realized on the ultrathin-barrier Al0.05Ga0.95N/GaN heterojunctions. Moreover, the low V_{th hysteresis of 50 mV and subthreshold swing of 70 mv/dec were achieved based on the in-situ SiNx/Al0.05Ga0.95N interface. The combination of Al2O3 layer and in-situ SiNx layer can also increase the output current and suppress the gate current leakage. |
| 关键词 | |
| 学校署名 | 第一
; 通讯
|
| 语种 | 英语
|
| 相关链接 | [Scopus记录] |
| 收录类别 | |
| 资助项目 | Key-Area Research and Development Program of Guangdong Province[
|
| WOS研究方向 | Engineering
|
| WOS类目 | Engineering, Electrical & Electronic
|
| WOS记录号 | WOS:000675595800119
|
| EI入藏号 | 20212210424605
|
| EI主题词 | Alumina
; Aluminum gallium nitride
; Aluminum oxide
; Dielectric materials
; Gallium nitride
; Gate dielectrics
; Heterojunctions
; III-V semiconductors
; Manufacture
; Silicon
|
| EI分类号 | Heat Treatment Processes:537.1
; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3
; Dielectric Materials:708.1
; Semiconductor Devices and Integrated Circuits:714.2
; Inorganic Compounds:804.2
|
| Scopus记录号 | 2-s2.0-85106487662
|
| 来源库 | Scopus
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9420933 |
| 引用统计 |
被引频次[WOS]：0
|
| 成果类型 | 会议论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/229603 |
| 专题 | 工学院_深港微电子学院 |
| 作者单位 | 1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China 2.Department of Electronic and Information Engineering,Hong Kong Polytechnic University,Hong Kong,Hong Kong 3.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Shenzhen,Guangdong,518055,China 4.Dongguan Institute of Opto-Electronics Peking University,Dongguan,523808,China |
| 第一作者单位 | 深港微电子学院 |
| 通讯作者单位 | 深港微电子学院 |
| 第一作者的第一单位 | 深港微电子学院 |
| 推荐引用方式 GB/T 7714 |
He，Jiaqi,Cheng，Wei Chih,Jiang，Yang,et al. Study of bilayer Al2O3/in-situ SiNxdielectric stacks for gate modulation in ultrathin-barrier AlGaN/GaN MIS-HEMTs[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2021:1-3.
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| Study_of_bilayer_Al2（545KB） | -- | -- | 限制开放 | -- | ||
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