镀膜机自动控制系统的设计与实现——在高纯钽薄膜化学气相沉积镀膜机中的应用

DESIGN AND IMPLEMENTATION OF AUTOMATIC CONTROL SYSTEM FOR COATING MACHINE——APPLICATION IN HIGH PURITY TANTALUM THIN FILM CHEMICAL VAPOR DEPOSITION COATING MACHINE

张晗

11930067

硕士

材料工程

陈廷勇

2021-05-21

2021-06-15

南方科技大学

深圳

难熔金属钽是芯片制造工艺中的重要金属之一，主要应用于铜导线互连工艺中，以溅射的方式沉积在铜导线上，作为铜导线的阻挡层，防止因铜原子扩散而造成的晶体管失效。目前一般采用溅射工艺制备阻挡层，然而随着芯片制程的快速发展，所需薄膜的质量要求越来越严格，采用溅射法所带来的的缺陷会越来越明显。本论文将提出一种制备大尺寸高纯钽薄膜的化学气相沉积（Chemical Vapor Deposition，CVD）工艺设计方案，为改良铜导线互连工艺提供了新的思路。论文中对该工艺所需的生产设备做了初步研发工作，包括工艺路线分析、化学气相沉积反应室的设计与仿真、自动控制系统的选型与测试、控制系统的软件设计等。本文首先研究了化学气相沉积法制备大尺寸金属钽薄膜材料的工艺设计方案，选择了TaF5作为该工艺方案的反应前驱气体，研究了TaF5通过氢气还原沉积金属Ta的反应机理，并提出了电解法和化学反应法两种反应尾气处理方式。还利用商用流体力学计算软件Fluent对反应室的温度场分布进行了仿真研究，明确了反应室内的高温气氛会带来不良的影响。本文还对工业自动化控制系统进行了研究，对基于计算机的控制系统和可编程逻辑控制器（Programmable Logic Controller，PLC）控制系统进行了现场接线与测试，得到基于计算机的控制系统更适合多轴运动控制，而PLC控制系统更适合本设备的过程控制的结论，因此本设备的控制系统采用PLC控制系统。本文最后对PLC及其模块进行了选型，对该设备中的真空系统、气路控制系统、温度控制系统、基台转速控制系统做了初步设计与选型，在三菱公司开发的软件GX Works 2和GT Designer 3上完成了温度控制和基台转速控制的初步程序设计，并设计出了第一代人机界面。

As one of the important metals in chip manufacturing process, refractory tantalum is mainly used in the interconnection process of copper wire. It is deposited on the copper wire by sputtering as the barrier layer of copper wire to prevent the transistor failure caused by the diffusion of copper atoms. At present, sputtering technology is generally used to prepare the barrier layer. However, with the rapid development of chip manufacturing process, the quality requirements of the required films are more and more strict, and the defects caused by sputtering method will become more and more obvious.In this thesis, a CVD (Chemical Vapor Deposition) process design scheme for preparing large size and high purity tantalum thin films is proposed, which provides a new idea for improving copper wire interconnection process. In this thesis, we have done the preliminary research and development of the production equipment needed for this process, including the analysis of process route, the design and simulation of chemical vapor deposition reaction chamber, the selection、testing and the software design of automatic control system.In this thesis, the process design scheme of preparing large size tantalum thin film material by chemical vapor deposition is firstly studied. TaF5 is selected as the reaction precursor gas of this process scheme, and the reaction mechanism of TaF5 is studied by hydrogen reduction deposition of metal Ta. Two reaction tail gas treatment methods, electrolysis method and chemical reaction method, are proposed. The CFD(Computational Fluid Dynamics) software Fluent is used to simulate the temperature field distribution of the reaction chamber, and it is clear that the high temperature atmosphere in the reaction chamber will bring adverse effects.This thesis also study the industrial automation control system. The PC-based control system and PLC(Programmable Logic Controller) control system are wired and tested on the spot. PC-based control system is more suitable for multi-axis motion control, and PLC control system is more suitable for the process control. PLC is selected as the control system of Ta CVD.At the end of this thesis, the PLC and its modules are selected, and the vacuum system, gas path control system, temperature control system and base station speed control system in the equipment are designed and selected. On the software GX Works 2 and GT Designer 3 developed by Mitsubishi Company, the preliminary program design of temperature control and base station speed control is completed, and the first generation of man-machine interface is designed.

钽薄膜 化学气相沉积 计算流体力学模拟 工业自动化控制系统 可编程逻辑控制器

tantalum thin film CVD CFD simulation industrial automation control systems PLC

中文

独立培养

南方科技大学

张晗. 镀膜机自动控制系统的设计与实现——在高纯钽薄膜化学气相沉积镀膜机中的应用[D]. 深圳. 南方科技大学,2021.