纳微快报（英文版）

Xiaokun Yang1; Ji Yang9; Jahangeer Khan3; Hui Deng8; Shengjie Yuan10; Jian Zhang4; Yong Xia6; Feng Deng11; Xue Zhou; Farooq Umar; Zhixin Jin; Haisheng Song; Chun Cheng; Mohamed Sabry; Jiang Tang

2020

纳微快报（英文版）   影响因子和分区

2311-6706

The recent emerging progress of quantum dot ink (QD-ink) has overcome the complexity of multiple-step colloidal QD (CQD) film preparation and pronouncedly promoted the device performance.However,the detrimental hydroxyl (OH) ligands induced from synthesis procedure have not been completely removed.Here,a halide ligand additive strategy was devised to optimize QD-ink process.It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface,which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances.The corresponding power conversion efficiency of this optimized device reached 10.78％.(The control device was 9.56％.) Therefore,this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands,which is also compatible with other CQD-based optoelectronic devices.

Hydroxyl ligand HI additive Surface passivation Quantum dots ink Solar cells

英语

第一

(This work was financially supported by National Natural Science Foundation of China )%(the Foundation of Shenzhen Science and Technology Innovation Committee )%(Cheng also thanks the Guangdong-Hong Kong joint innovation project )%(and Guangdong Natural Science Funds for Distinguished Young Scholars )%The authors thank Wuhan Institute of Physics and Mathematics,Chinese Academy of Sciences (CAS) for Solid-state NMR measurements,Material Science and Engineering of HUST,Testing Center of HUST,the Center for Nanoscale Characterization & Devices (CNCD),WNLO-HUST for facility access

MATERIALS SCIENCE

WanFang

perioarticalwnkb-e202003007

1.Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, People's Republic of China;Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen 518055, People's Republic of China;Shenzhen R&D Center of Huazhong University of Science and
2.Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, People's Republic of China
3.Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, People's Republic of China;Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000,People's Republic of China
4.School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan 430074, People's Republic of China
5.National Center for Magnetic Resonance in Wuhan, State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan 430071, People's Republic of China
6.Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan 430074, People's Republic of China;Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen 518055, People's Republic of China
7.Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen 518055, People's Republic of China
8.Physics Department, College of Applied Science, Umm A1-Qura University, Mecca,Kingdom of Saudi Arabia;Solar Physics Lab, National Research Institute of Astronomy and Geophysics, Cairo, Egypt
9.华中科技大学
10.中国科学院武汉物理与数学研究所
11.南方科技大学

Xiaokun Yang,Ji Yang,Jahangeer Khan,等. 纳微快报（英文版）[J]. 纳微快报（英文版）,2020,12(3):117-128.

Xiaokun Yang.,Ji Yang.,Jahangeer Khan.,Hui Deng.,Shengjie Yuan.,...&Jiang Tang.(2020).纳微快报（英文版）.纳微快报（英文版）,12(3),117-128.

Xiaokun Yang,et al."纳微快报（英文版）".纳微快报（英文版） 12.3(2020):117-128.