南方科技大学知识苑(SUSTech KC): Magnetic Field Controlled Interlayer Coupling in MoS2 Field Effect Transistors

题名	Magnetic Field Controlled Interlayer Coupling in MoS2 Field Effect Transistors
作者	Yang, Yuying 1; Li, Alei2,3 ; Wei, Mengmeng 1; Gong, Youpin 4,5; Qin, Wei 1
通讯作者	Gong, Youpin; Qin, Wei
发表日期	2021-08-01
DOI	10.1002/aelm.202100548
发表期刊	Advanced Electronic Materials 影响因子和分区
ISSN	2199-160X
卷号	7
摘要	The understanding of interlayer couplings should be paid much more attention owing to their importance in 2D materials with different layers. Here, through changing the number of layers, the tunability of interlayer coupling by external magnetic field in 2D material based field effect transistors is studied. External magnetic field can increase triplet electron-hole (e-h) pairs to promote interlayer coupling, where larger source-drain current is induced. Moreover, increasing the gate voltage or source-drain voltage, dipole-dipole interaction among the layers will be enhanced to weaken the tunability of source-drain current by magnetic field. This result reveals the magnetic field dependence of interlayer couplings in 2D materials and provides a guidance to develop new functional 2D material devices.
关键词	interlayer coupling magnetic field MoS (2) spin
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
资助项目	National Natural Science Foundation of China[11774203,91963103] ; Taishan Scholar Foundation of Shandong Province[tsqn201812007] ; Major Program of Shandong Province Natural Science Foundation[ZR2019ZD43] ; Shandong University Multidisciplinary Research and Innovation Team of Young Scholars[2020QNQT013]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000680793100001
出版者	WILEY
EI入藏号	20213210727702
EI主题词	Drain current ; Layered semiconductors ; Magnetic fields ; Molybdenum compounds ; Sulfur compounds
EI分类号	Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconductor Devices and Integrated Circuits:714.2
来源库	Web of Science
引用统计	被引频次[WOS]：1
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/242029
专题	理学院_物理系
作者单位	1.Shandong Univ, State Key Lab Crystal Mat, Sch Phys, 27 Shanda Nan Rd, Jinan 250100, Peoples R China 2.Harbin Inst Technol, Sch Phys, 90 Xidazhi St, Harbin 150001, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, 1088 Xueyuan Ave, Shenzhen 518055, Peoples R China 4.Chongqing Univ, Coll Phys, 174 Shazheng St, Chongqing 400044, Peoples R China 5.Chongqing Univ, Ctr Quantum Mat & Devices, Inst Adv Interdisciplinary Studies, Soft Matter & Interdisciplinary Res Ctr, 174 Shazheng St, Chongqing 400044, Peoples R China
推荐引用方式 GB/T 7714	Yang, Yuying,Li, Alei,Wei, Mengmeng,et al. Magnetic Field Controlled Interlayer Coupling in MoS2 Field Effect Transistors[J]. Advanced Electronic Materials,2021,7.
APA	Yang, Yuying,Li, Alei,Wei, Mengmeng,Gong, Youpin,&Qin, Wei.(2021).Magnetic Field Controlled Interlayer Coupling in MoS2 Field Effect Transistors.Advanced Electronic Materials,7.
MLA	Yang, Yuying,et al."Magnetic Field Controlled Interlayer Coupling in MoS2 Field Effect Transistors".Advanced Electronic Materials 7(2021).