题名 | Room temperature ppt-level NO2 gas sensor based on SnO (x) /SnS nanostructures with rich oxygen vacancies |
作者 | |
通讯作者 | Ye, Huaiyu; Zhang, Guoqi |
发表日期 | 2021-10-01
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DOI | |
发表期刊 | |
ISSN | 2053-1583
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卷号 | 8期号:4 |
摘要 | In this paper, tin oxidation (SnO (x) )/tin-sulfide (SnS) heterostructures are synthesized by the post-oxidation of liquid-phase exfoliated SnS nanosheets in air. We comparatively analyzed the NO2 gas response of samples with different oxidation levels to study the gas sensing mechanisms. The results show that the samples oxidized at 325 degrees C are the most sensitive to NO2 gas molecules, followed by the samples oxidated at 350 degrees C, 400 degrees C and 450 degrees C. The repeatabilities of 350 degrees C samples are better than that of 325 degrees C, and there is almost no shift in the baseline. Thus this work systematically analyzed the gas sensing performance of SnO (x) /SnS-based sensor oxidized at 350 degrees C. It exhibits a high response of 171% towards 1 ppb NO2, a wide detecting range (from 1 ppb to 1 ppm), and an ultra-low theoretical detection limit of 5 ppt, and excellent repeatability at room temperature. The sensor also shows superior gas selectivity to NO2 in comparison to several other gas molecules, such as NO, H-2, SO2, CO, NH3, and H2O. After x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscope, and electron paramagnetic resonance characterizations combining first principle analysis, it is found that the outstanding NO2 sensing behavior may be attributed to three factors: the Schottky contact between electrodes and SnO (x) /SnS; active charge transfer in the surface and the interface layer of SnO (x) /SnS heterostructures; and numerous oxygen vacancies generated during the post-oxidation process, which provides more adsorption sites and superior bandgap modulation. Such a heterostructure-based room-temperature sensor can be fabricated in miniaturized size with low cost, making it possible for large-scale applications. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 通讯
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资助项目 | National Key R&D Program of China[2018YFE0204600]
; Key-Area Research and Development Program of GuangDong Province[2019B010131001]
; Shenzhen Fundamental Research Program[JCYJ20200109140822796]
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WOS研究方向 | Materials Science
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WOS类目 | Materials Science, Multidisciplinary
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WOS记录号 | WOS:000680667700001
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出版者 | |
EI入藏号 | 20213410791145
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EI主题词 | Ammonia
; Charge Transfer
; Chemical Detection
; Gas Detectors
; Gas Sensing Electrodes
; IV-VI Semiconductors
; Layered Semiconductors
; Molecules
; Nitrogen Oxides
; Oxidation
; Oxygen Vacancies
; Paramagnetic Resonance
; Scanning Electron Microscopy
; Sulfur Dioxide
; Transmission Electron Microscopy
; X Ray Photoelectron Spectroscopy
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EI分类号 | Magnetism: Basic Concepts And Phenomena:701.2
; Chemistry:801
; Chemical Reactions:802.2
; Inorganic Compounds:804.2
; Accidents And Accident Prevention:914.1
; Atomic And Molecular Physics:931.3
; Crystalline Solids:933.1
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:16
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/242033 |
专题 | 工学院_深港微电子学院 |
作者单位 | 1.Delft Univ Technol, Fac Elect Engn Math & Comp Sci, Dept Microelect, NL-2628 CT Delft, Netherlands 2.Educ Minist China, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China 3.Chongqing Univ, Coll Optoelect Engn, Chongqing 400044, Peoples R China 4.Sky Chip Interconnect Technol Co Ltd, Shenzhen 518117, Peoples R China 5.Harbin Inst Technol, Harbin 150001, Peoples R China 6.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China 7.Shenzhen Inst Wide Bandgap Semicond, Shenzhen 518055, Guangdong, Peoples R China 8.Lamar Univ, Dept Mech Engn, Beaumont, TX 77710 USA |
通讯作者单位 | 深港微电子学院 |
推荐引用方式 GB/T 7714 |
Tang, Hongyu,Gao, Chenshan,Yang, Huiru,et al. Room temperature ppt-level NO2 gas sensor based on SnO (x) /SnS nanostructures with rich oxygen vacancies[J]. 2D Materials,2021,8(4).
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APA |
Tang, Hongyu.,Gao, Chenshan.,Yang, Huiru.,Sacco, Leandro.,Sokolovskij, Robert.,...&Zhang, Guoqi.(2021).Room temperature ppt-level NO2 gas sensor based on SnO (x) /SnS nanostructures with rich oxygen vacancies.2D Materials,8(4).
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MLA |
Tang, Hongyu,et al."Room temperature ppt-level NO2 gas sensor based on SnO (x) /SnS nanostructures with rich oxygen vacancies".2D Materials 8.4(2021).
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条目包含的文件 | ||||||
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Tang_2021_2D_Mater._(3037KB) | -- | -- | 限制开放 | -- |
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