Modification of thermal transport in few-layer MoS2by atomic-level defect engineering

Zhao，Yunshan1; Zheng，Minrui2; Wu，Jing3; Guan，Xin4; Suwardi，Ady3; Li，Yida5; Lal，Manohar2; Xie，Guofeng6; Zhang，Gang7; Zhang，Lifa1; Thong，John T.L.2

2021-07-14

10.1039/d1nr01832a

Nanoscale   影响因子和分区

2040-3364

2040-3372

Molybdenum disulfide (MoS2) has attracted significant attention due to its good charge carrier mobility, high on/off ratio in field-effect transistors and novel layer-dependent band structure, with potential applications in modern electronic, photovoltaic and valleytronic devices. Despite these advantages, its thermal transport property has often been neglected until recently. In this work, we probe phonon transport in few-layer MoS2 flakes with various point defect concentrations enabled by helium ion (He+) irradiation. For the first time, we experimentally show that Mo-vacancies greatly impede phonon transport compared to S-vacancies, resulting in a larger reduction of thermal conductivity. Furthermore, Raman characterization shows that the in-plane Raman-sensitive peak E2g1 was red-shifted with increasing defect concentration, corresponding to the gradual damage of the in-plane crystalline networks and the gradual reduction in the measured thermal conductivity. Our work provides a practical approach for atomic-level engineering of phonon transport in two-dimensional (2D) layered materials by selectively removing elements, thus holding potential applications in designing thermal devices based on various emerging 2D materials.

SCI ; EI

英语

其他

WOS:000667794400001

20212910645197

Defects ; Field effect transistors ; Hall mobility ; Hole mobility ; Layered semiconductors ; Molybdenum compounds ; Nanocrystalline materials ; Phonons ; Photovoltaic effects ; Red Shift ; Thermal conductivity ; Thermal Engineering

Thermodynamics:641.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Electronic Structure of Solids:933.3 ; Materials Science:951

2-s2.0-85109965675

Scopus

1.NNU-SULI Thermal Energy Research Center (NSTER),Center for Quantum Transport and Thermal Energy Science (CQTES),School of Physics and Technology,Nanjing Normal University,Nanjing,210023,China
2.Department of Electrical and Computer Engineering,National University of Singapore,117583,Singapore
3.Institute of Materials Research and Engineering,Agency for Science,Technology and Research,Singapore,138634,Singapore
4.International Studies College,National University of Defense Technology,Nan Jing,210012,China
5.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Southern University of Science and Technology,Shenzhen,518055,China
6.Hunan University of Science and Technology,Xiangtan,411201,China
7.Institute of High Performance Computing,Agency for Science,Technology and Research,Singapore,138632,Singapore

Zhao，Yunshan,Zheng，Minrui,Wu，Jing,et al. Modification of thermal transport in few-layer MoS2by atomic-level defect engineering[J]. Nanoscale,2021,13(26):11561-11567.

Zhao，Yunshan.,Zheng，Minrui.,Wu，Jing.,Guan，Xin.,Suwardi，Ady.,...&Thong，John T.L..(2021).Modification of thermal transport in few-layer MoS2by atomic-level defect engineering.Nanoscale,13(26),11561-11567.

Zhao，Yunshan,et al."Modification of thermal transport in few-layer MoS2by atomic-level defect engineering".Nanoscale 13.26(2021):11561-11567.