A 0.9-v 22.7-ppm/ºC sub-bandgap voltage reference with single BJT and two resistors

Wang，Lidan; Zhan，Chenchang; Lin，Jie; Zhao，Shuangxing; Zhang，Nian

10.1109/ISCAS51556.2021.09401724

2021

0271-4310

Proceedings - IEEE International Symposium on Circuits and Systems

2021-May

A CMOS sub-bandgap voltage reference (sub-BGR) with single BJT and two resistors is presented in this paper. The proposed sub-BGR structure generates the complementary-to-absolute-temperature (CTAT) voltage not only occupying small chip area and consuming nA-level current, but also achieving low sensitivity to the current mirror mismatches. The CTAT voltage is a scaled emitter-base voltage of a BJT and the proportional-to-absolute-temperature (PTAT) voltage is based on the stacking of ∆VGS of sub-threshold MOSFETs. The proposed sub-BGR circuit is implemented in a standard 0.18-μm CMOS process, and the active area is 0.059 mm. The measured results show that the sub-BGR circuit can work with a supply voltage down to 0.9 V and the power consumption is only 66 nW. An average TC of 22.7 ppm/ºC with a temperature range of -40 ºC ~125 ºC and a line sensitivity of 0.059%/V are achieved.

Low power Small area Sub-bandgap Sub-threshold Temperature coefficient

第一

英语

2-s2.0-85109025601

Scopus

School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China

Wang，Lidan,Zhan，Chenchang,Lin，Jie,et al. A 0.9-v 22.7-ppm/ºC sub-bandgap voltage reference with single BJT and two resistors[C],2021.