Realizing High Thermoelectric Performance in Earth-Abundant Bi2S3 Bulk Materials via Halogen Acid Modulation

BiS-based thermoelectric materials without toxic and expensive elements have a high Seebeck coefficient and intrinsic low thermal conductivity. However, BiS suffers from low electrical conductivity, which makes it a less-than-perfect thermoelectric material. In this work, halogen elements F, Cl, and Br from halogen acid are successfully introduced into the BiS lattice using a hydrothermal procedure to efficiently improve the carrier concentration. Compared with the pure sample, the electron concentration of the BiS sample treated with HCl is increased by two orders of magnitude. An optimal power factor of 470 µW m K for the BiSCl sample at 673 K is obtained. Density functional theory calculations reveal that an effective delocalized electron conductive network forms after Cl doping, which raises the Fermi level into the conduction bands, thus generating more free electrons and improving the conductivity of the BiS-based materials. Ultimately, an excellent ZT of ≈0.8 is achieved at 673 K for the BiSCl sample, which is one of the highest values reported for a state-of-the-art BiS system. The energy conversion efficiency of the module reaches 2.3% at 673 K with a temperature difference of 373 K. This study offers a new method for enhancing the thermoelectric properties of BiS by adding halogen acid in the hydrothermal process for powder synthesis.