中文版 | English
题名

Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature T C

作者
通讯作者Li,Xingji; Gao,Weibo; Liu,Zheng; Li,Xingji; Gao,Weibo; Liu,Zheng
共同第一作者Nair,Govindan Kutty Rajendran; Zhang,Zhaowei; Hou,Fuchen; Nair,Govindan Kutty Rajendran; Zhang,Zhaowei; Hou,Fuchen
发表日期
2021
DOI
发表期刊
ISSN
1998-0124
EISSN
1998-0000
卷号15页码:457-464
摘要

Two-dimensional (2D) ferromagnets with out-of-plane (OOP) magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density. However, a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor (CMOS) compatible substrates has not yet been mainly explored, which hinders the practical application of 2D magnets. This work demonstrates a cascaded space confined chemical vapor deposition (CS-CVD) technique to synthesize 2D FeGeTe ferromagnets. The weight fraction of iron (Fe) in the precursor controls the phase purity of the as-grown FeGeTe. As a result, high-quality FeGeTe and FeGeTe flakes have been grown selectively using the CS-CVD technique. Curie temperature (T) of the as-grown FeGeTe can be up to ∼ 280 K, nearly room temperature. The thickness and temperature-dependent magnetic studies on the FeGeTe reveal a 2D Ising to 3D XY behavior. Also, Terahertz spectroscopy experiments on FeGeTe display the highest conductivity among other FeGeTe 2D magnets. The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices. [Figure not available: see fulltext.]

关键词
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
共同第一 ; 其他
WOS记录号
WOS:000656780500006
EI入藏号
20212410493100
EI主题词
Chemical Vapor Deposition ; CMOS Integrated Circuits ; Ferromagnetic Materials ; Ferromagnetism ; Germanium Compounds ; Magnetic Anisotropy ; Magnetic Storage ; Magnets ; Metals ; MOS Devices ; Oxide Semiconductors ; Substrates ; Terahertz Spectroscopy
EI分类号
Magnetic Materials:708.4 ; Semiconductor Devices And Integrated Circuits:714.2 ; Data Storage, Equipment And Techniques:722.1 ; Chemical Reactions:802.2 ; Mechanics:931.1 ; Physical Properties Of Gases, Liquids And Solids:931.2
Scopus记录号
2-s2.0-85107590109
来源库
Scopus
引用统计
被引频次[WOS]:23
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/242303
专题理学院_物理系
作者单位
1.School of Material Science and Engineering,Singapore,50 Nanyang Ave,639798,Singapore
2.Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore,21 Nanyang Link,637371,Singapore
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.Institute of Materials Research and Engineering,Agency for Science Technology and Research (A*STAR),Singapore,2 Fusionopolis Way,138634,Singapore
5.School of Material Science and Engineering,School of Physics,Harbin Institute of Technology,Harbin,150001,China
6.Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,518055,China
7.National Institute of Laser Enhanced Sciences (NILES),Cairo University,Giza,12613,Egypt
8.CINTRA CNRS/NTU/THALES,UMI 3288,Singapore,Research Techno Plaza,637553,Singapore
9.School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore,50 Nanyang Ave,639798,Singapore
10.School of Material Science and Engineering,Singapore,50 Nanyang Ave,639798,Singapore
11.Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore,21 Nanyang Link,637371,Singapore
12.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
13.Institute of Materials Research and Engineering,Agency for Science Technology and Research (A*STAR),Singapore,2 Fusionopolis Way,138634,Singapore
14.School of Material Science and Engineering,School of Physics,Harbin Institute of Technology,Harbin,150001,China
15.Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,518055,China
16.National Institute of Laser Enhanced Sciences (NILES),Cairo University,Giza,12613,Egypt
17.CINTRA CNRS/NTU/THALES,UMI 3288,Singapore,Research Techno Plaza,637553,Singapore
18.School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore,50 Nanyang Ave,639798,Singapore
推荐引用方式
GB/T 7714
Nair,Govindan Kutty Rajendran,Zhang,Zhaowei,Hou,Fuchen,et al. Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature T C[J]. Nano Research,2021,15:457-464.
APA
Nair,Govindan Kutty Rajendran.,Zhang,Zhaowei.,Hou,Fuchen.,Abdelaziem,Ali.,Xu,Xiaodong.,...&Liu,Zheng.(2021).Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature T C.Nano Research,15,457-464.
MLA
Nair,Govindan Kutty Rajendran,et al."Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature T C".Nano Research 15(2021):457-464.
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