题名 | Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature T C |
作者 | Nair,Govindan Kutty Rajendran1; Zhang,Zhaowei2; Hou,Fuchen3,6 ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
通讯作者 | Li,Xingji; Gao,Weibo; Liu,Zheng; Li,Xingji; Gao,Weibo; Liu,Zheng |
共同第一作者 | Nair,Govindan Kutty Rajendran; Zhang,Zhaowei; Hou,Fuchen; Nair,Govindan Kutty Rajendran; Zhang,Zhaowei; Hou,Fuchen |
发表日期 | 2021
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DOI | |
发表期刊 | |
ISSN | 1998-0124
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EISSN | 1998-0000
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卷号 | 15页码:457-464 |
摘要 | Two-dimensional (2D) ferromagnets with out-of-plane (OOP) magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage density. However, a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor (CMOS) compatible substrates has not yet been mainly explored, which hinders the practical application of 2D magnets. This work demonstrates a cascaded space confined chemical vapor deposition (CS-CVD) technique to synthesize 2D FeGeTe ferromagnets. The weight fraction of iron (Fe) in the precursor controls the phase purity of the as-grown FeGeTe. As a result, high-quality FeGeTe and FeGeTe flakes have been grown selectively using the CS-CVD technique. Curie temperature (T) of the as-grown FeGeTe can be up to ∼ 280 K, nearly room temperature. The thickness and temperature-dependent magnetic studies on the FeGeTe reveal a 2D Ising to 3D XY behavior. Also, Terahertz spectroscopy experiments on FeGeTe display the highest conductivity among other FeGeTe 2D magnets. The results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices. [Figure not available: see fulltext.] |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
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学校署名 | 共同第一
; 其他
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WOS记录号 | WOS:000656780500006
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EI入藏号 | 20212410493100
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EI主题词 | Chemical Vapor Deposition
; CMOS Integrated Circuits
; Ferromagnetic Materials
; Ferromagnetism
; Germanium Compounds
; Magnetic Anisotropy
; Magnetic Storage
; Magnets
; Metals
; MOS Devices
; Oxide Semiconductors
; Substrates
; Terahertz Spectroscopy
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EI分类号 | Magnetic Materials:708.4
; Semiconductor Devices And Integrated Circuits:714.2
; Data Storage, Equipment And Techniques:722.1
; Chemical Reactions:802.2
; Mechanics:931.1
; Physical Properties Of Gases, Liquids And Solids:931.2
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Scopus记录号 | 2-s2.0-85107590109
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来源库 | Scopus
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引用统计 |
被引频次[WOS]:23
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/242303 |
专题 | 理学院_物理系 |
作者单位 | 1.School of Material Science and Engineering,Singapore,50 Nanyang Ave,639798,Singapore 2.Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore,21 Nanyang Link,637371,Singapore 3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China 4.Institute of Materials Research and Engineering,Agency for Science Technology and Research (A*STAR),Singapore,2 Fusionopolis Way,138634,Singapore 5.School of Material Science and Engineering,School of Physics,Harbin Institute of Technology,Harbin,150001,China 6.Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,518055,China 7.National Institute of Laser Enhanced Sciences (NILES),Cairo University,Giza,12613,Egypt 8.CINTRA CNRS/NTU/THALES,UMI 3288,Singapore,Research Techno Plaza,637553,Singapore 9.School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore,50 Nanyang Ave,639798,Singapore 10.School of Material Science and Engineering,Singapore,50 Nanyang Ave,639798,Singapore 11.Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore,21 Nanyang Link,637371,Singapore 12.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China 13.Institute of Materials Research and Engineering,Agency for Science Technology and Research (A*STAR),Singapore,2 Fusionopolis Way,138634,Singapore 14.School of Material Science and Engineering,School of Physics,Harbin Institute of Technology,Harbin,150001,China 15.Shenzhen Key Laboratory of for Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,518055,China 16.National Institute of Laser Enhanced Sciences (NILES),Cairo University,Giza,12613,Egypt 17.CINTRA CNRS/NTU/THALES,UMI 3288,Singapore,Research Techno Plaza,637553,Singapore 18.School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore,50 Nanyang Ave,639798,Singapore |
推荐引用方式 GB/T 7714 |
Nair,Govindan Kutty Rajendran,Zhang,Zhaowei,Hou,Fuchen,et al. Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature T C[J]. Nano Research,2021,15:457-464.
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APA |
Nair,Govindan Kutty Rajendran.,Zhang,Zhaowei.,Hou,Fuchen.,Abdelaziem,Ali.,Xu,Xiaodong.,...&Liu,Zheng.(2021).Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature T C.Nano Research,15,457-464.
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MLA |
Nair,Govindan Kutty Rajendran,et al."Phase-pure two-dimensional FexGeTe2 magnets with near-room-temperature T C".Nano Research 15(2021):457-464.
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条目包含的文件 | 条目无相关文件。 |
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