南方科技大学知识苑(SUSTech KC): Proton-induced achiral structural transition at 180° domain wall in ferroelectrics

题名	Proton-induced achiral structural transition at 180° domain wall in ferroelectrics
作者	Li，Bo1,2 ; Lei，Zhi Feng 3; Huang，Jing 4; Guo，Hong Xia 4
通讯作者	Li，Bo
发表日期	2021
DOI	10.1080/10420150.2021.1935941
发表期刊	Radiation Effects and Defects in Solids 影响因子和分区
ISSN	1042-0150
EISSN	1029-4953
卷号	176页码:681-689
摘要	The influence of proton radiation on the achiral structural transition at 180° domain walls in tetragonal ferroelectric BaTiO is theoretically studied in this work. The proton-induced oxygen vacancy in ferroelectrics is predicted using the Monte Carlo Simulations, which increases with the increase of the proton fluence and the energy of the incident proton. A model based on the LGD is developed to investigate the influence of oxygen vacancy which is considered as a defect dipole on the achiral structural transition of Bloch–Néel type of domain wall. Under the proton radiation, the Bloch-type of domain wall shows the character of asymmetric because of the coupling of the polarization and the electric field, while the proton radiation just changes the magnitude of the polarization in the Néel-type of domain wall.
关键词	Achiral structural transition ferroelectric domain oxygen defect proton
相关链接	[Scopus记录]
收录类别	SCI ; EI
语种	英语
学校署名	通讯
WOS记录号	WOS:000658601400001
EI入藏号	20212410489934
EI主题词	Barium titanate ; Electric fields ; Ferroelectric materials ; Monte Carlo methods ; Oxygen ; Oxygen vacancies ; Polarization
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Mathematical Statistics:922.2 ; Crystalline Solids:933.1
Scopus记录号	2-s2.0-85107491413
来源库	Scopus
引用统计	被引频次[WOS]：1
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/242305
专题	工学院_材料科学与工程系
作者单位	1.Laboratory of Wide Band-gap Semiconductor Materials,Ministry of Education,Xidian University,Xian,China 2.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,China 3.Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,Guangzhou,China 4.School of Materials and Engineer1ing,Xiangtan University,Hunan Xiangtan,China
第一作者单位	材料科学与工程系
通讯作者单位	材料科学与工程系
推荐引用方式 GB/T 7714	Li，Bo,Lei，Zhi Feng,Huang，Jing,et al. Proton-induced achiral structural transition at 180° domain wall in ferroelectrics[J]. Radiation Effects and Defects in Solids,2021,176:681-689.
APA	Li，Bo,Lei，Zhi Feng,Huang，Jing,&Guo，Hong Xia.(2021).Proton-induced achiral structural transition at 180° domain wall in ferroelectrics.Radiation Effects and Defects in Solids,176,681-689.
MLA	Li，Bo,et al."Proton-induced achiral structural transition at 180° domain wall in ferroelectrics".Radiation Effects and Defects in Solids 176(2021):681-689.