Towards intrinsically pure graphene grown on copper

Xu，Xiaozhi1,2; Qiao，Ruixi3,4; Liang，Zhihua1,2; Zhang，Zhihong3,4; Wang，Ran1,2; Zeng，Fankai1,2; Cui，Guoliang1,2; Zhang，Xiaowen1,2; Zou，Dingxin5; Guo，Yi3; Liu，Can3; Fu，Ying6; Zhou，Xu1,2; Wu，Muhong4; Wang，Zhujun7; Zhao，Yue5; Wang，Enke1,2; Tang，Zhilie1,2; Yu，Dapeng5; Liu，Kaihui3,4

2021

10.1007/s12274-021-3575-9

Nano Research   影响因子和分区

1998-0124

1998-0000

The state-of-the-art semiconductor industry is built on the successful production of silicon ingot with extreme purity as high as 99.999999999%, or the so-called “eleven nines”. The coming high-end applications of graphene in electronics and optoelectronics will inevitably need defect-free pure graphene as well. Due to its two-dimensional (2D) characteristics, graphene restricts all the defects on its surface and has the opportunity to eliminate all kinds of defects, i.e., line defects at grain boundaries and point or dot defects in grains, and produce intrinsically pure graphene. In the past decade, epitaxy growth has been adopted to grow graphene by seamlessly stitching of aligned grains and the line defects at grain boundaries were eliminated finally. However, as for the equally common dot and point defects in graphene grain, there are rare ways to detect or reduce them with high throughput and efficiency. Here, we report a methodology to realize the production of ultrapure graphene grown on copper by eliminating both the dot and point defects in graphene grains. The dot defects, proved to be caused by the silica particles shedding from quartz tube during the high-temperature growth, were excluded by a designed heat-resisting box to prevent the deposition of particles on the copper surface. The point defects were optically visualized by a mild-oxidation-assisted method and further reduced by etching-regrowth process to an ultralow level of less than 1/1,000 µm. Our work points out an avenue for the production of intrinsically pure graphene and thus lays the foundation for the large-scale graphene applications at the integrated-circuit level. [Figure not available: see fulltext.]

copper mild-oxidation point defect pure graphene

SCI ; EI

英语

其他

WOS:000659398000004

20212410485392

Copper ; Etching ; Grain boundaries ; Point defects ; Semiconductor device manufacture ; Silica

Copper:544.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Crystal Lattice:933.1.1

2-s2.0-85107465352

Scopus

1.Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,School of Physics and Telecommunication Engineering,South China Normal University,Guangzhou,510006,China
2.Guangdong-Hong Kong Joint Laboratory of Quantum Matter,South China Normal University,Guangzhou,510006,China
3.State Key Laboratory for Mesoscopic Physics,Frontiers Science Center for Nano-optoelectronics,School of Physics,Peking University,Beijing,100871,China
4.International Centre for Quantum Materials,Collaborative Innovation Centre of Quantum Matter,Peking University,Beijing,100871,China
5.Shenzhen Institute for Quantum Science and Engineering,and Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
6.Songshan Lake Materials Laboratory,Institute of Physics,Chinese Academy of Sciences,Guangdong,523808,China
7.School of Physical Science and Technology,Shanghai Tech University,Shanghai,200031,China

Xu，Xiaozhi,Qiao，Ruixi,Liang，Zhihua,et al. Towards intrinsically pure graphene grown on copper[J]. Nano Research,2021,15(2):919-924.

Xu，Xiaozhi.,Qiao，Ruixi.,Liang，Zhihua.,Zhang，Zhihong.,Wang，Ran.,...&Liu，Kaihui.(2021).Towards intrinsically pure graphene grown on copper.Nano Research,15(2),919-924.

Xu，Xiaozhi,et al."Towards intrinsically pure graphene grown on copper".Nano Research 15.2(2021):919-924.