Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique

Sun，Jianwen1; Zhan，Teng2; Sokolovskij，Robert3; Liu，Zewen4; Sarro，Pasqualina M.5; Zhang，Guoqi5

2021-08-01

10.1109/JSEN.2021.3082205

IEEE Sensors Journal   影响因子和分区

2379-9153

AlGaN/GaN Gate Recess Gas Sensor NO₂

SCI ; EI

英语

其他

20212310464891

Aluminum Gallium Nitride ; Chemical Sensors ; Gallium Nitride ; Gas Detectors ; Heating Equipment ; III-V Semiconductors ; Nitrogen Oxides ; Wet Etching

Chemistry:801 ; Inorganic Compounds:804.2 ; Accidents And Accident Prevention:914.1

ENGINEERING

IEEE

1.Institutue of Microelectronic, Tsinghua University, Beijing 100084, China and Department of Microelectronics, Delft University of Technology, 2628 CD Delft, the Netherlands. (e-mail: sunjw15@163.com)
2.Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
3.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
4.Institutue of Microelectronic, Tsinghua University, Beijing 100084, China.
5.Department of Microelectronics, Delft University of Technology, 2628 CD Delft, the Netherlands.

Sun，Jianwen,Zhan，Teng,Sokolovskij，Robert,et al. Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique[J]. IEEE Sensors Journal,2021,21(15):16475-16483.

Sun，Jianwen,Zhan，Teng,Sokolovskij，Robert,Liu，Zewen,Sarro，Pasqualina M.,&Zhang，Guoqi.(2021).Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique.IEEE Sensors Journal,21(15),16475-16483.

Sun，Jianwen,et al."Enhanced Sensitivity Pt/AlGaN/GaN Heterostructure NO₂ Sensor Using a Two-Step Gate Recess Technique".IEEE Sensors Journal 21.15(2021):16475-16483.