| 题名 | Temperature-induced band shift in bulk γ- InSe by angle-resolved photoemission spectroscopy |
| 作者 | |
| 通讯作者 | He，Liang |
| 发表日期 | 2018-05-01
|
| DOI | |
| 发表期刊 | |
| EISSN | 2158-3226
|
| 卷号 | 8期号:5 |
| 摘要 | Indium selenide (InSe) has recently become popular research topics because of its unique layered crystal structure, direct band gap and high electron mobilities. In this work, we have acquired the electronic structure of bulk γ-InSe at various temperatures using angle-resolved photoemission spectroscopy (ARPES). We have also found that as the temperature decreases, the valence bands of γ-InSe exhibit a monotonic shift to lower binding energies. This band shift is attributed to the change of lattice parameters and has been validated by variable temperature X-ray diffraction measurements and theoretical calculations. |
| 相关链接 | [Scopus记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 其他
|
| WOS记录号 | WOS:000433954000054
|
| EI入藏号 | 20182205248955
|
| EI主题词 | Crystal structure
; Electronic structure
; Energy gap
; Indium compounds
; Selenium compounds
; Photoelectron spectroscopy
|
| EI分类号 | Physical Chemistry:801.4
; Crystal Lattice:933.1.1
|
| Scopus记录号 | 2-s2.0-85047418201
|
| 来源库 | Scopus
|
| 引用统计 |
被引频次[WOS]：6
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/242397 |
| 专题 | 理学院_物理系 |
| 作者单位 | 1.National Laboratory of Solid State Microstructures,School of Electronic Science and Engineering,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,210093,China 2.Department of Physics,Southern University of Science and Technology (SUSTech),Shenzhen, Guangdong,518055,China 3.National Laboratory of Solid State Microstructures,College of Engineering and Applied Sciences,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,210093,China |
| 推荐引用方式 GB/T 7714 |
Xu，Huanfeng,Wang，Wei,Zhao，Yafei,et al. Temperature-induced band shift in bulk γ- InSe by angle-resolved photoemission spectroscopy[J]. AIP Advances,2018,8(5).
|
| APA |
Xu，Huanfeng.,Wang，Wei.,Zhao，Yafei.,Zhang，Xiaoqian.,Feng，Yue.,...&He，Liang.(2018).Temperature-induced band shift in bulk γ- InSe by angle-resolved photoemission spectroscopy.AIP Advances,8(5).
|
| MLA |
Xu，Huanfeng,et al."Temperature-induced band shift in bulk γ- InSe by angle-resolved photoemission spectroscopy".AIP Advances 8.5(2018).
|
| 条目包含的文件 | 条目无相关文件。 | |||||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论