A 54–68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS

Mosalam，Hamed1; Xiao，Wenbo2; Gui，Xiaoyan3; Li，Dan3; Pan，Quan4

2022-01

10.1109/TCSII.2021.3084628

IEEE Transactions on Circuits and Systems II: Express Briefs   影响因子和分区

1558-3791

Millimeter-wave power amplifier (PA) 1-dB compression 60 GHz CMOS PAE

SCI ; EI

第一

20212310460334

Energy efficiency ; Power amplifiers

Energy Conservation:525.2 ; Amplifiers:713.1 ; Semiconductor Devices and Integrated Circuits:714.2

IEEE

1.School of Microelectronics, and Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, 518055, China, and also with Microelectronics Department, Electronics Research Institute, Cairo, Egypt.
2.School of Microelectronics, and Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, 518055, China.
3.School of Electronic and Information Engineering and the School of Microelectronics, Xian Jiaotong University, Xian, 710049, China.
4.School of Microelectronics, and Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, 518055, China. (e-mail: panq@sustech.edu.cn)

Mosalam，Hamed,Xiao，Wenbo,Gui，Xiaoyan,等. A 54–68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS[J]. IEEE Transactions on Circuits and Systems II: Express Briefs,2022,69(1):40-44.

Mosalam，Hamed,Xiao，Wenbo,Gui，Xiaoyan,Li，Dan,&Pan，Quan.(2022).A 54–68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS.IEEE Transactions on Circuits and Systems II: Express Briefs,69(1),40-44.

Mosalam，Hamed,et al."A 54–68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS".IEEE Transactions on Circuits and Systems II: Express Briefs 69.1(2022):40-44.